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IRF135S203
MOSFET N-CH 135V 129A TO263-3
- Fabricante
- Mfr. Parte #IRF135S203
- Paquete TO-263-3
- Hoja de datos IRF135S203 DataSheet
- En stock3493
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Especificaciones
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET®, StrongIRFET™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 135 V |
| Current-ContinuousDrain(Id)@25°C | 129A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 8.4mOhm @ 77A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 270 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 9700 pF @ 50 V |
| PowerDissipation(Max) | 441W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | PG-TO263-3-2 |
Descripción general
Description
Key specifications include a maximum drain-source voltage (V_DS) of 55V and a continuous drain current (I_D) of around 34A at a specific gate-source voltage (V_GS). Its gate threshold voltage (V_GS(th)) typically ranges from 2V to 4V, allowing for efficient drive with standard logic levels.
The IRF135S203 is housed in a TO-220 package, facilitating thermal management and easy mounting. Its robust construction and efficiency make it a popular choice in automotive, industrial, and consumer electronics applications. When utilizing this MOSFET, it's essential to consider gate drive requirements and thermal dissipation to ensure reliable operation.
Features
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 55V, making it suitable for various power management tasks.
2. Current Rating: The device supports a continuous drain current (I_D) of up to 50A, allowing it to manage substantial loads.
3. On-Resistance: It boasts a low on-resistance (R_DS(on)) of approximately 0.05 ohms at a gate-source voltage (V_GS) of 10V, minimizing power loss and heat generation during operation.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2V to 4V, facilitating operation with lower drive voltages.
5. Package Type: Typically available in a TO-220 package, providing effective thermal dissipation.
6. Fast Switching: The MOSFET is designed for fast switching applications, enhancing overall efficiency in circuits.
These characteristics make the IRF135S203 suitable for use in power supplies, motor control, and other high-power electronic circuits.
Package
Pinout
Pin Count and Functions:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow from the drain to the source.
2. Drain (D): This is the pin through which the current enters the MOSFET. It connects to the load.
3. Source (S): This pin is where the current exits the MOSFET to return to ground or the power supply.
The IRF135S203 is designed for high efficiency and can handle high voltage and current, making it suitable for various switching and amplification applications. Always refer to the specific datasheet for detailed electrical characteristics and ratings.
Manufacturer
Application
Equivalent
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