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IRF135B203
MOSFET N-CH 135V 129A TO220-3
- Fabricante
- Mfr. Parte #IRF135B203
- Paquete
- Hoja de datos IRF135B203 DataSheet
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Especificaciones
| Series | StrongIRFET™ |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 135 V |
| Current - Continuous Drain (Id) @ 25°C | 129A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 8.4mOhm @ 77A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 270 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 9700 pF @ 50 V |
| Power Dissipation (Max) | 441W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO220-3 |
| Package / Case | TO-220-3 |
| Base Product Number | IRF135 |
Descripción general
Description
The device features a robust gate threshold voltage, which allows for easy driving from standard logic levels. Its thermal performance is enhanced by a TO-220 package, facilitating effective heat dissipation. This makes the IRF135B203 ideal for applications requiring efficient power handling and reliability.
Overall, the IRF135B203 is a versatile component in modern electronic designs, offering efficiency and durability for demanding applications.
Features
1. Voltage Rating: It typically supports a drain-source voltage (V_DS) of up to 55V.
2. Current Rating: Capable of handling continuous drain current (I_D) of around 30A, making it suitable for power applications.
3. On-Resistance (R_DS(on)): Low on-resistance, typically around 0.05 ohms, ensuring efficient conduction and minimal heat generation during operation.
4. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage ranges from 2V to 4V, allowing it to be driven effectively with low-voltage logic levels.
5. Package Type: Available in various packages like TO-220 and DPAK, providing flexibility for different thermal and space requirements.
6. Fast Switching Speed: Designed for efficient switching, which enhances performance in power conversion applications.
7. Thermal Management: Adequate thermal resistance, facilitating heat dissipation for reliable performance.
These features make the IRF135B203 suitable for a variety of applications, including power supplies, motor controls, and DC-DC converters.
Package
Pinout
1. Gate (G): This pin controls the MOSFET's operation, allowing it to switch on or off based on the voltage applied.
2. Drain (D): This is the terminal through which the main current flows when the MOSFET is on. It connects to the load.
3. Source (S): This pin is connected to the ground or the negative side of the power supply in most applications.
The IRF135B203 is designed for applications that require efficient switching and high-speed performance. It typically features a low on-resistance and high breakdown voltage, making it suitable for power management and amplification tasks in various electronic circuits.
Manufacturer
Application
Equivalent
Envío
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Referencia de tarifas de envío (DHL/FedEx):
DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.
FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.
Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.
Pagos
Payment Methods
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