IPW65R190CFD

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IPW65R190CFD

MOSFETs N-Ch 650V 17.5A TO247-3 CoolMOS CFD2

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Especificaciones

Packaging Tube
Standard Pack Qty 240

Descripción general

Description

The IPW65R190CFD is a high-performance N-channel MOSFET designed for power applications. It features a maximum drain-source voltage (V_DS) of 650V and a continuous drain current (I_D) of 190A at a specified junction temperature. This MOSFET is known for its low on-resistance (R_DS(on)), which minimizes power loss and improves efficiency in switching applications.
With a fast switching speed and high avalanche energy capability, the IPW65R190CFD is suitable for various applications, including power supplies, motor drives, and renewable energy systems. It is packaged in a TO-247 format, allowing for effective heat dissipation, making it ideal for high-power applications.
Overall, the IPW65R190CFD is recognized for its robust performance, reliability, and efficiency, making it a preferred choice for engineers looking to optimize power conversion systems.

Features

The IPW65R190CFD is an N-channel MOSFET designed for high-efficiency and high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 650V, making it suitable for high-voltage applications.
2. Continuous Drain Current: The device can handle a continuous drain current (I_D) of up to 190A, allowing it to manage significant power loads.
3. Low R_DS(on): It features a low on-resistance (R_DS(on)) of 0.19Ω, which enhances efficiency by reducing power losses during operation.
4. Fast Switching: The device is optimized for high-speed switching, making it ideal for applications such as power supplies and motor drives.
5. Thermal Performance: With a robust package design, it offers excellent thermal performance, ensuring reliable operation under high power conditions.
6. Applications: Commonly used in power conversion systems, such as inverters, converters, and other industrial applications requiring high efficiency and reliability.
These characteristics make the IPW65R190CFD a preferred choice for various demanding electronic applications.

Package

The IPW65R190CFD is typically packaged in a TO-247 form factor, which is a type of power semiconductor package designed for efficient heat dissipation and high power handling.

Pinout

The IPW65R190CFD is a N-channel MOSFET designed for high efficiency in power applications. It features a pin count of 3. The functions of the pins are as follows:
1. Gate (G): This pin controls the MOSFET's switching behavior. A voltage applied here turns the device on or off.
2. Drain (D): This is the terminal through which the main current flows when the MOSFET is in the on state.
3. Source (S): This pin is connected to the ground or the return path for the current flowing through the drain.
The device is optimized for high voltage and current applications, making it suitable for power supply circuits, motor drivers, and other high-power electronics. Its specifications include a high breakdown voltage and low on-resistance, enhancing its performance in energy-efficient designs.

Manufacturer

The IPW65R190CFD is manufactured by Infineon Technologies AG, a German semiconductor manufacturer. Infineon specializes in a wide range of semiconductor solutions, including power semiconductors, microcontrollers, and sensors. The company is a global leader in the automotive, industrial power control, and security sectors, providing innovative technologies for applications such as electric vehicles, renewable energy, and smart home devices. Infineon focuses on enhancing energy efficiency and sustainability through its products and solutions.

Application

The IPW65R190CFD is an N-channel MOSFET commonly used in applications such as motor drives, power supplies, and DC-DC converters. Its high voltage and current handling capabilities make it suitable for renewable energy systems, electric vehicles, and industrial automation. Additionally, it is utilized in telecom and consumer electronics for efficient power management and switching applications.

Equivalent

The IPW65R190CFD is a 190V N-channel MOSFET. Equivalent products include:
1. STP65NF190 (STMicroelectronics)
2. IRF140 (Infineon)
3. BSC190N190 (Infineon)
4. FDPF190N (ON Semiconductor)
Always verify specifications such as RDS(on), VGS, and package type for compatibility in your specific application.

Envío

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Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

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