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IPW65R150CFDA
MOSFETs AUTOMOTIVE_COOLMOS
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- Mfr. Parte #IPW65R150CFDA
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- Hoja de datos IPW65R150CFDA DataSheet
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Descripción general
Description
Key specifications include a low on-resistance (RDS(on)), which minimizes power loss during operation, and fast switching capabilities, contributing to high efficiency in energy conversion. It also has a built-in body diode, allowing for reverse current flow, which is beneficial in certain applications. The IPW65R150CFDA is typically packaged in a TO-247 housing, facilitating easy integration into various circuits.
Overall, this MOSFET is widely used in renewable energy systems, industrial applications, and electric vehicles due to its robust performance and reliability in demanding environments.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 650V, making it suitable for high-voltage applications.
2. Current Capability: The device supports a continuous drain current (I_D) of 150A, providing robust performance in demanding conditions.
3. R_DS(on): It features a low on-resistance (R_DS(on)) of approximately 0.15 ohms, which minimizes conduction losses and enhances efficiency.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2V to 4V, allowing for efficient drive control.
5. Switching Speed: Optimized for fast switching, it reduces switching losses, making it ideal for applications like converters and inverters.
6. Thermal Performance: The device has a high thermal rating, facilitating effective heat dissipation and reliability.
These features make the IPW65R150CFDA suitable for use in power supplies, motor drives, and renewable energy systems.
Package
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