IPW60R070P6

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IPW60R070P6

600V, 0.07OHM, N-CHANNEL MOSFET

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Especificaciones

Package 1
Series Bulk
ProductStatus CoolMOS™
FETType Active
Technology N-Channel
DraintoSourceVoltage(Vdss) MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 600 V
DriveVoltage(MaxRdsOnMinRdsOn) 53.5A (Tc)
RdsOn(Max)@IdVgs 10V
Vgs(th)(Max)@Id 70mOhm @ 20.6A, 10V
GateCharge(Qg)(Max)@Vgs 4.5V @ 1.72mA
Vgs(Max) 100 nC @ 10 V
InputCapacitance(Ciss)(Max)@Vds ±20V
FETFeature 4750 pF @ 100 V
OperatingTemperature 391W (Tc)
MountingType -55°C ~ 150°C (TJ)
SupplierDevicePackage Through Hole

Descripción general

Description

The IPW60R070P6 is a high-voltage N-channel power MOSFET manufactured by Infineon Technologies. It is designed for applications requiring efficient switching and high performance in power management circuits, such as inverters, motor drives, and power supplies.
Key specifications include a breakdown voltage of 600V, a maximum continuous drain current of 60A, and a low on-resistance of approximately 0.07 ohms, which helps minimize power losses during operation. The device features a fast switching speed, making it suitable for high-frequency applications, and is housed in a TO-247 package for effective thermal management.
The IPW60R070P6 is part of the CoolMOS™ family, known for its energy efficiency and thermal performance. It is ideal for use in renewable energy systems, automotive applications, and industrial power supplies, where reliability and efficiency are critical.

Features

The IPW60R070P6 is an N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: 600V, suitable for high-voltage applications.
2. Current Rating: Can handle continuous drain currents up to 60A, making it ideal for power electronics.
3. RDS(on): Low on-resistance of 0.070 ohms enhances efficiency and reduces power losses.
4. Gate Threshold Voltage: VGS(th) ranges from 2 to 4V, enabling easy interfacing with microcontrollers and drivers.
5. Fast Switching: Optimized for quick switching, enhancing performance in applications like inverters and converters.
6. Package Type: Available in a TO-247 package, providing excellent thermal characteristics.
7. Thermal Resistance: Low junction-to-case thermal resistance for better heat dissipation.
These features make the IPW60R070P6 suitable for applications in renewable energy, motor drives, and industrial power supplies.

Package

The IPW60R070P6 is typically packaged in a TO-247 package type. This package is designed for high-power applications, providing good thermal performance and ease of mounting.

Pinout

The IPW60R070P6 is a power MOSFET from Infineon Technologies. It features a total of 6 pins. The functions of these pins are as follows:
1. Gate (G) - Controls the MOSFET operation. A voltage applied here switches the device on or off.
2. Drain (D) - The primary output where the current flows out when the MOSFET is in the on state.
3. Source (S) - The terminal through which current enters the MOSFET when it is conducting.
The pin configuration is typically as follows:
- Pin 1: Gate
- Pin 2: Drain
- Pin 3: Source
- Pin 4: Drain
- Pin 5: Source
- Pin 6: Gate
This device is designed for high voltage applications and has a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 60A, making it suitable for various power management applications.

Manufacturer

The IPW60R070P6 is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer based in Germany, specializing in power semiconductors, microcontrollers, sensors, and automotive electronics. The company focuses on providing solutions for various industries, including automotive, industrial, and consumer electronics. Infineon is known for its innovation in energy efficiency and smart mobility technologies, playing a significant role in the transition to renewable energy and electric vehicles.

Application

The IPW60R070P6 is a 600V N-channel IGBT primarily used in industrial applications such as motor drives, power inverters, and welding equipment. Its high efficiency and fast switching capabilities make it suitable for renewable energy systems, including photovoltaic inverters and wind turbine converters. Additionally, it is utilized in power supply units and UPS systems, where reliable performance under high voltage and current conditions is essential.

Equivalent

The IPW60R070P6 is a N-channel MOSFET from Infineon, with a rated voltage of 600V and a current capacity of 70A. Equivalent products include:
1. STP60NF06 - STMicroelectronics
2. IRF840 - Infineon/International Rectifier
3. FQB30N60 - Fairchild (on newer equivalents)
4. MTP50N60E - ON Semiconductor
Always verify specifications and suitability for your application.

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DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

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