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IPP60R099P7
POWER FIELD-EFFECT TRANSISTOR, 6
- Fabricante
- Mfr. Parte #IPP60R099P7
- Paquete TO-220
- Hoja de datos IPP60R099P7 DataSheet
- En stock2112
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Especificaciones
| Package | Bulk |
| ProductStatus | Active |
Descripción general
Description
Key features of the IPP60R099P7 include low on-state resistance (RDS(on)), which minimizes conduction losses, and optimized Qg (gate charge), resulting in reduced switching losses and improved efficiency. These characteristics make it an ideal choice for use in switch-mode power supplies (SMPS), photovoltaic inverters, and other power conversion systems.
Moreover, the device is designed to ensure robustness and reliability, featuring excellent thermal performance and fast switching capabilities. The IPP60R099P7 is available in TO-220 package, facilitating easy integration into various designs while providing efficient thermal management. Overall, this MOSFET is well-suited for applications requiring high efficiency, compact design, and reliable operation.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_ds) of 600V, making it suitable for high-voltage applications.
2. R_ds(on): The on-resistance (R_ds(on)) is very low, typically 99 mΩ, which helps in reducing conduction losses.
3. Current Capability: It can handle a continuous drain current of up to 23.8A at 25°C.
4. Efficiency: Optimized for low switching losses, providing high efficiency in power conversion.
5. Temperature Performance: Capable of operating in a wide temperature range, which enhances reliability in various environments.
6. Applications: Commonly used in applications like SMPS (Switched-Mode Power Supplies), solar inverters, and industrial power supplies.
7. Package: Offered in a TO-220 FullPAK package, which provides good thermal performance.
The IPP60R099P7's features make it a compelling choice for designers looking for a balance between high efficiency, reliability, and performance in power management systems.
Package
Pinout
1. Gate (G): This pin controls the MOSFET's operation. A voltage applied to the gate determines whether the MOSFET is in the conducting or non-conducting state.
2. Drain (D): This is the pin where the current enters the MOSFET. In a circuit, it's connected to the load that the MOSFET will switch on and off.
3. Source (S): This pin is the return path for the current. It connects to the ground or the negative side of the power supply in most applications.
The IPP60R099P7 is designed for high efficiency and performance in power conversion applications, offering benefits like reduced switching losses and improved thermal performance.
Manufacturer
Application
Equivalent
1. NTP60N100S3 from ON Semiconductor
2. STF10N60M2 from STMicroelectronics
3. AOTF11S60 from Alpha and Omega Semiconductor
Always check the datasheets for detailed specifications to ensure compatibility.
Envío
Métodos de envíoNosotros
ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.
Referencia de tarifas de envío (DHL/FedEx):
DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.
FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.
Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.
Pagos
Payment Methods
El plazo de pago es 100% prepagado.
Actualmente, solo aceptamos los siguientes métodos de pago:
1. de PayPal
2. Tarjeta de crédito/débito
3. Transferencia bancaria
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