IPP200N25N3G

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IPP200N25N3G

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  • Mfr. Parte #IPP200N25N3G
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Especificaciones

EU RoHS Compliant
ECCN (US) EAR99
Part Status Unconfirmed
Automotive No
PPAP No
Product Category Power MOSFET
Configuration Single
Process Technology OptiMOS 3
Channel Mode Enhancement
Channel Type N
Number of Elements per Chip 1
Maximum Drain Source Voltage (V) 250
Maximum Gate Source Voltage (V) ±20
Maximum Continuous Drain Current (A) 64
Maximum Drain Source Resistance (MOhm) 20@10V
Typical Gate Charge @ Vgs (nC) 64@10V
Typical Gate Charge @ 10V (nC) 64
Typical Input Capacitance @ Vds (pF) 5340@100V
Maximum Power Dissipation (mW) 300000
Typical Fall Time (ns) 12
Typical Rise Time (ns) 20
Typical Turn-Off Delay Time (ns) 45
Typical Turn-On Delay Time (ns) 18
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 175
Packaging Tube
Mounting Through Hole
Package Height 9.45(Max)
Package Width 4.57(Max)
Package Length 10.36(Max)
PCB changed 3
Standard Package Name TO
Supplier Package TO-220
Pin Count 3
Lead Shape Through Hole
Maximum Gate Threshold Voltage (V) 4
Operating Junction Temperature (°C) -55 to 175
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Descripción general

Description

The IPP200N25N3G is a high-performance N-channel MOSFET designed for various power management applications. It features a maximum drain-source voltage (Vds) of 250V and a continuous drain current (Id) rating of 200A, making it suitable for demanding conditions in industrial, automotive, and renewable energy systems. This device is part of Infineon's CoolMOS™ technology, which enhances efficiency and thermal performance, reducing energy losses during operation.
The MOSFET has a low on-resistance, ensuring minimal power dissipation and improving overall system efficiency. Its fast switching capabilities enable high-frequency operation, beneficial in applications like switch-mode power supplies (SMPS) and motor drives. The IPP200N25N3G is housed in a robust package that aids in effective heat dissipation, ensuring reliability and longevity.
Overall, the IPP200N25N3G is an excellent choice for engineers looking to optimize power conversion designs while managing thermal performance and efficiency.

Features

The IPP200N25N3G is a high-performance N-channel MOSFET designed for various power applications. Key features include:
1. Voltage Rating: It supports a maximum drain-source voltage (Vds) of 250V.
2. Current Rating: Capable of handling a continuous drain current (Id) of up to 200A, making it suitable for high-power applications.
3. On-Resistance: It exhibits a low RDS(on) value, typically around 10 mΩ, which minimizes conduction losses and improves efficiency.
4. Gate Threshold Voltage: The gate-source threshold voltage (Vgs(th)) is low, facilitating easy control with standard logic levels.
5. Thermal Performance: Features a high thermal conductivity that allows for effective heat dissipation, suitable for demanding environments.
6. Package Type: Available in a TO-247 package, which provides robust mounting options and good thermal performance.
Overall, the IPP200N25N3G is ideal for applications such as power supplies, motor drives, and renewable energy systems.

Package

The IPP200N25N3G is packaged in a TO-220 form factor, which is a type of metal case package commonly used for power transistors and MOSFETs, allowing for efficient heat dissipation and easy mounting to heatsinks.

Pinout

The IPP200N25N3G is an N-channel MOSFET with a pin count of 3. Its primary functions include acting as a switch in various applications, such as power management and motor control, due to its high-speed switching capabilities and low on-resistance.
The pin configuration is as follows:
1. Gate (G) - Controls the switching of the MOSFET; applying voltage here allows current to flow between the drain and source.
2. Drain (D) - The terminal where the current enters the MOSFET; it connects to the load.
3. Source (S) - The terminal where the current exits the MOSFET; typically connected to ground in low-side switching applications.
This device is rated for a maximum voltage of 25V and a continuous current of up to 200A, making it suitable for high-power applications.

Manufacturer

The IPP200N25N3G is manufactured by Infineon Technologies AG, a German semiconductor manufacturer. Infineon specializes in the production of semiconductor and system solutions for various applications, including automotive, industrial, and consumer electronics. The company is known for its focus on innovation and high-performance technologies, particularly in power semiconductors, microcontrollers, and sensors. Infineon is a key player in the global semiconductor market, contributing to advancements in energy efficiency, connectivity, and security across multiple sectors.

Application

The IPP200N25N3G is an N-channel power MOSFET used in various applications, including power management systems, DC-DC converters, motor drivers, and industrial automation. Its high current and voltage ratings make it suitable for automotive applications, renewable energy systems, and power amplifiers, as well as in consumer electronics for efficient switching and amplification.

Equivalent

The IPP200N25N3G is an N-channel MOSFET known for high current and voltage ratings. Equivalent products include the IRF3205, STP200N25, and BSC200N25. Always verify specifications such as RDS(on), VDS, and maximum current ratings when selecting a substitute.

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