IPP200N15N3G

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IPP200N15N3G

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Especificaciones

Manufacturer Infineon Technologies
Package TO-220
RDS(on) 20mΩ@10V,50A
Drain to Source Voltage 150V
Pd - Power Dissipation 150W
Current - Continuous Drain(Id) 50A
Type 1 N-channel
Gate Threshold Voltage (Vgs(th)@Id) 4V

Descripción general

Description

The IPP200N15N3G is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power applications. It is part of the Infineon family of power transistors and is characterized by its low on-resistance (RDS(on)), which minimizes conduction losses and enhances thermal performance.
Key specifications typically include a maximum drain-source voltage of 150V and a continuous drain current rating of up to 200A. The device is often used in applications such as power supplies, motor drives, and DC-DC converters. Its fast switching capabilities make it suitable for high-frequency operations, improving overall system efficiency.
The IPP200N15N3G also features a robust package design, allowing for effective thermal management and enhanced reliability in demanding environments. These traits make it a popular choice among engineers for designing efficient power electronic systems. Always refer to the specific datasheet for detailed electrical characteristics and application guidelines.

Features

The IPP200N15N3G is a high-performance N-channel power MOSFET designed for various applications, including power supplies and motor control. Key features include:
- Voltage Rating: 150V, suitable for high-voltage applications.
- On-Resistance (R_DS(on)): Typically low, around 0.2 ohms, enhancing efficiency by minimizing conduction losses.
- Continuous Drain Current: Up to 200A, allowing it to handle significant load currents.
- Gate Threshold Voltage: Low gate drive voltage requirement, typically between 2-4V, enabling easy interfacing with logic-level signals.
- Fast Switching Speed: Reduces switching losses, making it ideal for high-frequency applications.
- Thermal Resistance: Efficient heat dissipation due to a robust package design, leading to improved reliability.
- Package Type: Available in a TO-220 package, providing good thermal performance and ease of mounting.
These features make the IPP200N15N3G suitable for demanding applications that require high efficiency and reliability.

Package

The IPP200N15N3G is typically packaged in a TO-220 form factor. This package type is designed for efficient heat dissipation and is commonly used in high-power applications.

Pinout

The IPP200N15N3G is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) used in power applications. It is part of the Infineon CoolMOS™ family, designed for high efficiency and performance.
Pin Count: The IPP200N15N3G typically comes in a TO-220 package, which has a total of 3 pins.
Pin Functions:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied here allows current to flow between the drain and source.
2. Drain (D): This is the output pin where the load is connected. Current flows from the drain to the source when the MOSFET is on.
3. Source (S): This pin is connected to the ground or the negative side of the power supply. Current flows from the source to the drain when activated.
The device is rated for a maximum drain-source voltage of 150V and a continuous drain current of up to 200A, making it suitable for various high-voltage applications.

Manufacturer

The IPP200N15N3G is manufactured by Infineon Technologies AG, a leading global semiconductor manufacturer headquartered in Neubiberg, Germany. Infineon specializes in providing a wide range of semiconductor solutions, including power management, automotive electronics, and industrial applications. The company focuses on developing innovative technologies that enhance energy efficiency, connectivity, and security in various sectors, such as automotive, industrial, and consumer electronics. Infineon is known for its commitment to sustainability and advancing semiconductor technology to support a more connected and energy-efficient world.

Application

The IPP200N15N3G is an N-channel MOSFET primarily used in applications like power supplies, motor drives, and industrial automation. Its high efficiency and fast switching capabilities make it suitable for DC-DC converters, battery management systems, and power management in electric vehicles. Additionally, it can be employed in consumer electronics and renewable energy systems, such as solar inverters.

Equivalent

The IPP200N15N3G is an N-channel MOSFET. Equivalent products include the IRF200N15, STP200N15, and FQP200N15. Always verify the specifications such as voltage, current ratings, and package type to ensure compatibility for your specific application.

Envío

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Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

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