IPP029N06N

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IPP029N06N

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  • Mfr. Parte #IPP029N06N
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Especificaciones

Technology Si
Packaging Tube
Brand Infineon Technologies
Product Type MOSFETs
Series OptiMOS 5
Factory Pack Quantity:Factory Pack Quantity 500
Subcategory Transistors
Part # Aliases SP000917404 IPP29N6NXK IPP029N06NAKSA1
Mounting Style Through Hole
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Height 15.65 mm
Length 10 mm
Width 4.4 mm
Unit Weight 0.068784 oz
Package / Case TO-220-3
Configuration Single
Tradename OptiMOS
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 100 A
Rds On - Drain-Source Resistance 2.7 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2.1 V
Qg - Gate Charge 66 nC
Pd - Power Dissipation 136 W
Channel Mode Enhancement
Fall Time 8 ns
Rise Time 15 ns
Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 30 ns
Typical Turn-On Delay Time 17 ns
Forward Transconductance - Min 80 S

Descripción general

Description

IPP029N06N refers to a specific type of insulated gate bipolar transistor (IGBT) commonly used in electronic power applications. IGBTs combine the characteristics of both MOSFETs and bipolar transistors, allowing for efficient switching and control of electrical power. The designation "IPP" typically indicates it is part of a series by a particular manufacturer, while "029" generally denotes the voltage and current ratings, with "N06N" likely specifying packaging and additional features.
These devices are widely employed in applications such as motor drives, renewable energy systems, and industrial automation due to their high efficiency and fast switching capabilities. They can handle high voltages and currents, making them suitable for demanding power electronics applications. Understanding the specifications and ratings of IGBT devices like IPP029N06N is essential for engineers designing power conversion systems.

Features

The IPP029N06N is an N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It typically supports a maximum drain-source voltage (V_DS) of 60V.
2. Current Rating: Capable of handling continuous drain currents up to 29A, making it suitable for high-power applications.
3. R_DS(on): Low on-resistance (around 0.029 ohms), which minimizes conduction losses and improves efficiency.
4. Gate Threshold Voltage: Features a low gate threshold voltage (V_GS(th)), allowing for efficient switching with lower gate drive requirements.
5. Thermal Characteristics: Good thermal stability with a maximum junction temperature of around 175°C, ensuring reliable operation under varying conditions.
6. Package Type: Typically available in a TO-220 package, facilitating effective heat dissipation and ease of mounting.
These characteristics make the IPP029N06N suitable for use in power supplies, motor control, and other high-efficiency applications.

Package

The IPP029N06N is typically packaged in a TO-220 package type, which is a three-lead semiconductor package suitable for high-power applications.

Pinout

The IPP029N06N is a N-channel MOSFET manufactured by Infineon Technologies. It features a pin count of 5 in a TO-220 package. The primary functions of this MOSFET include acting as a switch or amplifier in electronic circuits, suitable for applications in power management, motor control, and other high-efficiency tasks.
The pin configuration is as follows:
1. Gate (G) - The control terminal used to turn the MOSFET on or off.
2. Drain (D) - The terminal through which the current flows from the load to the MOSFET.
3. Source (S) - The terminal that connects to the ground or the negative side of the power supply.
This device is characterized by a low on-resistance, enabling high current handling while minimizing power losses.

Manufacturer

The IPP029N06N is manufactured by Infineon Technologies AG, a global semiconductor manufacturer headquartered in Neubiberg, Germany. Infineon specializes in semiconductor and system solutions, focusing on automotive, industrial, and multi-market applications. The company is known for its innovative power management products, including MOSFETs, which are widely used in various electronic devices and systems for efficient energy management. Infineon's offerings include a range of components that support applications in areas like automotive electronics, renewable energy, and IoT, making it a key player in the semiconductor industry.

Application

The IPP029N06N is an N-channel MOSFET primarily used in power management applications, including DC-DC converters, battery management systems, and power supplies. Its low on-resistance and high efficiency make it suitable for automotive applications, motor drives, and industrial control systems. Additionally, it is utilized in renewable energy systems, such as solar inverters, and in various consumer electronics for efficient power distribution.

Equivalent

The IPP029N06N is an N-channel MOSFET. Equivalent products include the IRF3205, STP29NF06, and FDB60300. Make sure to verify specifications like VDS, ID, RDS(on), and gate charge for compatibility in your application.

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