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IPG20N04S4L-08
MOSFETs N-Ch 40V 20A TDSON-8 OptiMOS-T2
- Fabricante
- Mfr. Parte #IPG20N04S4L-08
- Paquete
- Hoja de datos IPG20N04S4L-08 DataSheet
- En stock28319
100% original & Nuevo
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Garantía de 365 días
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Especificaciones
| Packaging | MouseReel |
| Standard Pack Qty | 5000 |
Descripción general
Description
The IGBT features a low on-state voltage drop, which minimizes conduction losses, and excellent thermal stability. Its enhanced switching characteristics make it ideal for high-frequency applications. Additionally, it is packaged in a TO-220 or similar format, facilitating easy integration into electronic circuits.
Overall, the IPG20N04S4L-08 provides an effective solution for engineers seeking reliable and efficient switching devices in power electronics.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 400V, making it suitable for high-voltage applications.
2. On-Resistance: It boasts a low R_DS(on) value, typically around 20 mΩ, which enhances efficiency by minimizing power loss during operation.
3. Current Rating: The device can handle a continuous drain current (I_D) of up to 20A, allowing it to support substantial load requirements.
4. Gate Threshold Voltage: It offers a gate threshold voltage (V_GS(th)) in the range of 2-4V, ensuring compatibility with various driving voltages.
5. Fast Switching Speed: The MOSFET provides rapid switching capabilities, ideal for applications in switching power supplies and motor drivers.
6. Package Type: Typically housed in a TO-220 package, it allows for efficient heat dissipation.
Overall, the IPG20N04S4L-08 is suitable for a range of power management and conversion applications, including industrial and automotive sectors.
Package
Pinout
1. Gate (G) - Controls the MOSFET's switching action; typically receives input from a control signal.
2. Drain (D) - The output terminal through which the current flows when the device is on.
3. Source (S) - Connected to ground or the lower potential side of the load; the terminal through which current exits when the MOSFET is on.
4. Body Diode - Integrated within the structure, allows current flow in reverse direction under certain conditions.
The device is designed for high-efficiency applications, capable of handling significant voltage and current levels, making it suitable for power management and conversion applications.
Manufacturer
Application
Equivalent
1. STP20NF04
2. IRF320
3. AOD20N04
4. FQP20N04
5. BSS123
Always check specific parameters like voltage, current ratings, and package types for compatibility.
Envío
Métodos de envíoNosotros
ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.
Referencia de tarifas de envío (DHL/FedEx):
DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.
FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.
Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.
Pagos
Payment Methods
El plazo de pago es 100% prepagado.
Actualmente, solo aceptamos los siguientes métodos de pago:
1. de PayPal
2. Tarjeta de crédito/débito
3. Transferencia bancaria
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