IPD640N06L G

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IPD640N06L G

MOSFETs N-Ch 60V 18A DPAK-2

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Especificaciones

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Standard Pack Qty 2500

Descripción general

Description

The IPD640N06L is an N-channel MOSFET designed for high-performance applications, featuring a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of 64A. It is ideal for use in power management systems, such as switch-mode power supplies and motor drivers, due to its low on-resistance (R_DS(on)) of around 6 mΩ, which minimizes power loss and improves efficiency.
This device is constructed with advanced technology to ensure fast switching speeds and high thermal performance, making it suitable for high-frequency applications. The IPD640N06L is typically available in a DPAK or TO-220 package, facilitating effective heat dissipation.
In addition to its electrical characteristics, it also incorporates features designed to enhance reliability and durability, such as a maximum gate-source voltage (V_GS) of ±20V. Overall, the IPD640N06L is a versatile component suitable for a wide range of applications in modern electronic circuits.

Features

The IPD640N06L is a N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: Can handle a maximum drain-source voltage (V_DS) of 60V.
2. Current Rating: Rated for a continuous drain current (I_D) of up to 40A, making it suitable for power applications.
3. R_DS(on): Low on-resistance of approximately 6.4 mΩ at V_GS = 10V, which minimizes conduction losses and improves efficiency.
4. Gate Threshold Voltage: V_GS(th) typically ranges from 2V to 4V, allowing for effective operation with lower gate drive voltages.
5. Package Type: Available in a DPAK (TO-252) package, which aids in thermal dissipation and ease of mounting.
6. Switching Performance: Fast switching speeds, suitable for applications like DC-DC converters and motor drives.
These attributes make the IPD640N06L ideal for power management in automotive and industrial applications.

Package

The IPD640N06L G is typically packaged in a TO-220 type casing. This package type provides efficient thermal management and is suitable for power applications, allowing for easy heat dissipation.

Pinout

The IPD640N06L G is a N-channel MOSFET with a total of 5 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied here turns the device on or off.
2. Drain (D): This pin connects to the load; current flows from the Drain to the Source when the MOSFET is on.
3. Source (S): This pin is connected to the ground or negative side of the power supply, allowing current to flow from Drain to Source.
4. Body Diode: Internal to the MOSFET, it allows current to flow in the reverse direction when the device is off.
5. Thermal Pad (optional): Often used for heat dissipation, it may not be counted as a pin but serves crucial thermal management.
This device is designed for applications requiring high efficiency, such as in power management systems, DC-DC converters, and motor drivers.

Manufacturer

The IPD640N06L G is manufactured by Infineon Technologies AG. Infineon is a global semiconductor company headquartered in Neubiberg, Germany. It specializes in a wide range of technologies, including power semiconductors, microcontrollers, sensors, and automotive solutions. Infineon is known for providing innovative solutions that enable efficient energy management, smart mobility, and secure communications. The company serves various industries, including automotive, industrial, and consumer electronics, focusing on enhancing performance and sustainability through its semiconductor products.

Application

The IPD640N06L G is a high-performance N-channel MOSFET primarily used in power management applications, including DC-DC converters, motor drivers, and power supplies. Its low on-resistance and high current capacity make it suitable for automotive, industrial, and consumer electronics applications, particularly in efficient switching and amplification tasks.

Equivalent

The IPD640N06L G is an N-channel MOSFET primarily used in power applications. Equivalent products include:
1. IRF640N
2. STP40NF06
3. FQP40N06L
4. AOD6N06
5. BSS123
Always verify specifications such as voltage, current ratings, and RDS(on) values to ensure compatibility in your application.

Envío

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Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

Pagos

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2. Tarjeta de crédito/débito

3. Transferencia bancaria

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