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IPD60R380C6
MOSFET N-CH 600V 10.6A TO252-3
- Fabricante
- Mfr. Parte #IPD60R380C6
- Paquete TO-252-3
- Hoja de datos IPD60R380C6 DataSheet
- En stock7198
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Especificaciones
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | CoolMOS™ |
| ProductStatus | Discontinued at Digi-Key |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 600 V |
| Current-ContinuousDrain(Id)@25°C | 10.6A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 380mOhm @ 3.8A, 10V |
| Vgs(th)(Max)@Id | 3.5V @ 320µA |
| GateCharge(Qg)(Max)@Vgs | 32 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 700 pF @ 100 V |
| PowerDissipation(Max) | 83W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | PG-TO252-3 |
Descripción general
Description
Designed for use in power conversion applications, such as switching power supplies and motor drives, the IPD60R380C6 is optimized for high efficiency and fast switching speeds. This MOSFET is part of the CoolMOS™ series, which is known for its advanced technologies that improve performance and reliability.
The device is available in a TO-247 package, which provides effective thermal management and ease of handling. Overall, the IPD60R380C6 is ideal for engineers looking for robust solutions for demanding power electronics applications.
Features
1. Voltage Rating: 600V, making it suitable for high-voltage applications.
2. Current Rating: 60A continuous drain current, facilitating robust performance in demanding scenarios.
3. RDS(on): Low on-resistance of 0.38 ohms at a gate-source voltage of 10V, leading to reduced conduction losses.
4. Fast Switching: Optimized for high-speed switching, which enhances efficiency in power conversion applications.
5. Package Type: Available in a TO-247 package, allowing for effective heat dissipation and ease of mounting.
6. Applications: Ideal for use in power supplies, motor drives, and inverters, particularly in renewable energy systems.
These features make the IPD60R380C6 a reliable choice for engineers seeking performance in high-voltage and high-current applications.
Package
Pinout
The pin configuration typically includes:
1. Gate (G) - Controls the switching of the MOSFET.
2. Drain (D) - The terminal through which the load current flows.
3. Source (S) - The terminal connected to ground or the negative side of the power supply.
4. Gate Source (G-S) - For controlling the gate voltage.
5. Drain Source (D-S) - For connecting the MOSFET in the circuit.
This configuration allows for efficient switching and amplification in various electronic circuits. Always refer to the manufacturer's datasheet for precise pin assignments and additional specifications.
Manufacturer
Application
Equivalent
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