IPD50P04P413ATMA1

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IPD50P04P413ATMA1

MOSFET P-CH 40V 50A TO252-3

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Especificaciones

Package Tape & Reel (TR),Cut Tape (CT),Bulk
Series OptiMOS™
ProductStatus Not For New Designs
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 40 V
Current-ContinuousDrain(Id)@25°C 50A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 12.6mOhm @ 50A, 10V
Vgs(th)(Max)@Id 4V @ 85µA
GateCharge(Qg)(Max)@Vgs 51 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 3670 pF @ 25 V
PowerDissipation(Max) 58W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PG-TO252-3-313

Descripción general

Description

The IPD50P04P413ATMA1 is a high-performance N-channel MOSFET designed for various applications, including power management and DC-DC converters. It features a maximum drain-source voltage (V_DS) of 40V and a continuous drain current (I_D) rating of 50A, making it suitable for high-power applications. This MOSFET has a low on-resistance (R_DS(on)), which minimizes power loss and improves overall efficiency.
The device is housed in a DPAK package, allowing for better thermal performance and easier mounting on PCBs. Its fast switching capabilities make it ideal for high-frequency applications. The IPD50P04P413ATMA1 is commonly used in automotive, industrial, and consumer electronics sectors, where reliability and efficiency are critical.
Overall, this MOSFET is a robust solution for various electronic circuit designs that require effective power management and switching. Always refer to the manufacturer's datasheet for detailed specifications and recommended operating conditions.

Features

The IPD50P04P413ATMA1 is a high-performance N-channel MOSFET designed for various applications, including power management and switching. Key features include:
1. Voltage Rating: Typically supports a drain-source voltage (V_DS) of 40V.
2. Current Rating: Offers a continuous drain current (I_D) of 50A, making it suitable for high-current applications.
3. Low R_DS(on): Features a low on-resistance (R_DS(on)) value, which enhances efficiency by minimizing power loss during operation.
4. Fast Switching: Designed for fast switching capabilities, improving overall system performance.
5. Package Type: Available in a TO-220 package, facilitating heat dissipation and easy mounting on PCBs.
6. Thermal Resistance: Low thermal resistance helps in managing heat during operation.
7. Gate Threshold Voltage: Optimized for low gate drive voltage, making it compatible with various control circuits.
These attributes make the IPD50P04P413ATMA1 ideal for applications in power supplies, motor drivers, and DC-DC converters.

Package

The IPD50P04P413ATMA1 is packaged in a DPAK (TO-252) package type. This surface-mount package is designed for efficient heat dissipation and is commonly used for power management applications.

Pinout

The IPD50P04P413ATMA1 is an N-channel MOSFET with a pin count of 4. Its primary function is to switch and amplify electronic signals in various applications, particularly in power management and motor control.
The pins are typically configured as follows:
1. Gate (G) - Controls the MOSFET; voltage applied here turns the device on or off.
2. Drain (D) - The output terminal where the load is connected; current flows from drain to source when the device is on.
3. Source (S) - The terminal connected to ground or the negative side of the power supply; current exits here when the device is on.
4. Tab / Thermal Pad (if applicable) - Used for heat dissipation.
This MOSFET is designed for applications requiring high efficiency and low on-resistance, making it suitable for power supply circuits and high-speed switching.

Manufacturer

The IPD50P04P413ATMA1 is manufactured by Infineon Technologies AG. Infineon is a leading global semiconductor manufacturer headquartered in Germany. The company specializes in power semiconductors, microcontrollers, and sensors, catering to various sectors including automotive, industrial, and consumer electronics. Infineon is known for its innovation in power management and energy efficiency solutions, contributing significantly to advancing technologies in electric vehicles, renewable energy, and smart buildings.

Application

The IPD50P04P413ATMA1 is a N-channel MOSFET primarily used in power management applications. It is suitable for DC-DC converters, motor control, and power switching in various electronic devices. Its low on-resistance and high current capability make it ideal for automotive, industrial, and consumer electronics applications, including battery management systems and LED drivers.

Equivalent

The IPD50P04P413ATMA1 is a N-channel MOSFET. Equivalent products include the IRF3205, STP50NF06, and FQP50N06. Always verify specifications such as voltage, current, and Rds(on) to ensure compatibility for your specific application.

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