IPD090N03L G

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IPD090N03L G

MOSFETs N-Ch 30V 40A DPAK-2 OptiMOS 3

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Standard Pack Qty 2500

Descripción general

Description

The IPD090N03L G is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency applications. It features a low on-resistance (RDS(on)), typically around 9 mΩ, which allows for minimal power loss during operation, making it ideal for power management in various electronic devices, including power supplies, converters, and motor drives.
Key specifications include a maximum drain-source voltage (VDS) of 30V and a continuous drain current (ID) of up to 90A, depending on the thermal conditions. The MOSFET is housed in a compact DPAK package, facilitating easy integration into circuit designs while ensuring effective thermal dissipation.
The IPD090N03L G is appreciated for its fast switching capabilities, contributing to reduced switching losses and improved overall efficiency in power electronics. It is suitable for use in automotive, industrial, and consumer electronics applications where reliable performance and thermal management are crucial.
Overall, this component is a valuable choice for engineers seeking reliable, high-performance MOSFET solutions.

Features

The IPD090N03L G is an N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low-voltage applications.
2. On-Resistance (R_DS(on)): It exhibits a low on-resistance of approximately 9 mΩ at V_GS of 10V, which minimizes conduction losses.
3. Current Handling: The device can handle a continuous drain current (I_D) of up to 90A, allowing it to drive high loads.
4. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage ranges from 1V to 2.5V, enabling efficient switching at low gate voltages.
5. Package Type: It is available in a TO-220 package, which aids in heat dissipation and easy mounting.
6. Applications: Primarily used in power management, DC-DC converters, and motor control systems due to its fast switching speed and efficiency.
Overall, the IPD090N03L G is well-suited for applications requiring reliability and performance in power electronics.

Package

The IPD090N03L G is typically packaged in a TO-220 format. This package type provides efficient thermal performance and is suitable for high-power applications.

Pinout

The IPD090N03L G is an N-channel MOSFET with a total of 3 pins. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.

2. Drain (D): This pin is where the load connects. The current flows from the drain to the source when the MOSFET is turned on.

3. Source (S): This pin is connected to ground or a lower voltage level, allowing current to exit the device when it is activated.
The IPD090N03L G is designed for applications requiring high efficiency and fast switching, commonly used in power management and DC-DC converters. It features low on-resistance and high current handling capacity.

Manufacturer

The IPD090N03L G is manufactured by Infineon Technologies, a global semiconductor company headquartered in Germany. Infineon specializes in the development and production of a wide range of semiconductor solutions, including power semiconductors, microcontrollers, and sensors, catering to various industries such as automotive, industrial, and consumer electronics. The company is known for its focus on innovation and sustainability, providing technologies that enhance energy efficiency and reduce emissions. Infineon is recognized as a key player in the semiconductor market, contributing to advancements in areas like electric mobility, renewable energy, and the Internet of Things (IoT).

Application

The IPD090N03L G is an N-channel MOSFET commonly used in power management applications, including DC-DC converters, power supplies, motor control, and battery management systems. Its low on-resistance and high-speed switching capabilities make it suitable for efficient power conversion in consumer electronics, automotive applications, and industrial equipment.

Equivalent

The IPD090N03L G is an N-channel MOSFET with a 30V rating and a 90A current capability. Equivalent products include the IRF3205, FQP90N30, and STP90NF03L. Always verify specifications like RDS(on) and package type to ensure compatibility for your specific application.

Envío

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Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

Pagos

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