IPD068N10N3G

Las imágenes son solo para referencia

IPD068N10N3G

MOSFET N-CH 100V 90A DPAK

100% original & Nuevo

24 horas listos para el envío

Garantía de 365 días

RFQ y Obtenga más descuentos

Especificaciones

Part Status Active

Descripción general

Description

The IPD068N10N3G is a high-performance N-channel MOSFET from Infineon Technologies, designed for various applications, including power management and automotive systems. It features a low on-resistance of 68 mΩ, which enhances efficiency by reducing power losses during operation. The MOSFET is rated for a maximum drain-source voltage (V_DS) of 100V and can handle a continuous drain current of up to 75A, making it suitable for high-power applications.
This device comes in a compact DPAK package, which facilitates efficient heat dissipation and simplifies PCB design. The IPD068N10N3G also incorporates advanced technology that ensures fast switching speeds, making it ideal for applications such as DC-DC converters, motor drives, and power inverters.
Overall, the IPD068N10N3G combines robust performance with reliability, making it a popular choice for engineers looking to optimize power efficiency in their designs.

Features

The IPD068N10N3G is a high-performance N-channel MOSFET designed for various applications, particularly in power management and switching. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, making it suitable for high-voltage applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of up to 68A, providing robust performance for demanding loads.
3. R_DS(on): It offers a low on-resistance of approximately 10 mΩ, which enhances efficiency by reducing power losses during operation.
4. Fast Switching: Designed for rapid switching applications, it supports efficient operation in high-frequency circuits.
5. Thermal Management: The package is optimized for effective heat dissipation, which is crucial for maintaining performance under load.
6. Package Type: Typically available in TO-220 or similar packages, facilitating easy integration into circuit designs.
This MOSFET is ideal for applications like DC-DC converters, motor drives, and other power electronics requiring high efficiency and reliability.

Package

The IPD068N10N3G is packaged in a DPAK (TO-252) format. This package type is suitable for surface mount applications, providing efficient thermal performance and a compact footprint for power MOSFET devices.

Pinout

The IPD068N10N3G is an N-channel MOSFET with a pin count of 3. Its pin configuration typically includes:
1. Gate (G) - This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.
2. Drain (D) - This pin is the output terminal where the load is connected. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S) - This pin is connected to the ground or the lower potential side of the circuit.
The IPD068N10N3G is designed for high efficiency and fast switching applications, commonly used in power management, motor control, and DC-DC converters. Its low on-resistance and high current handling capability make it suitable for various power electronics applications.

Manufacturer

The manufacturer of the IPD068N10N3G is Infineon Technologies. Infineon is a multinational company based in Germany that specializes in semiconductor solutions. The company focuses on various markets, including automotive, industrial power control, and digital security. Infineon is known for its innovations in power semiconductors, microcontrollers, and sensors, catering to applications like electric vehicles, renewable energy, and the Internet of Things (IoT). With a commitment to advancing technology that enhances energy efficiency and sustainability, Infineon plays a significant role in the semiconductor industry globally.

Application

The IPD068N10N3G is a high-performance N-channel MOSFET primarily used in power management applications, including DC-DC converters, motor drives, and switch-mode power supplies. It is suitable for automotive, industrial, and consumer electronics due to its low on-resistance, fast switching capabilities, and high efficiency in handling power loads.

Equivalent

The IPD068N10N3G is an N-channel MOSFET. Equivalent products include the IRF1404, STP10NK60Z, and BSC090N10NS3. Always verify specifications such as voltage, current rating, and Rds(on) for compatibility in your specific application.

Envío

Métodos de envíoNosotros

ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.


Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

Pagos

Payment Methods

El plazo de pago es 100% prepagado.

Actualmente, solo aceptamos los siguientes métodos de pago:

1. de PayPal

2. Tarjeta de crédito/débito

3. Transferencia bancaria