IPD034N06N3 G

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IPD034N06N3 G

MOSFETs N-Ch 60V 100A DPAK-2 OptiMOS 3

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Standard Pack Qty 2500

Descripción general

Description

IPD034N06N3 G is a high-performance N-channel MOSFET designed for efficient power management applications. With a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of 34A, it is suitable for use in various applications, including power supplies, motor drives, and DC-DC converters. The device features low on-resistance (R_DS(on)), which contributes to reduced power losses and improved thermal efficiency.
The MOSFET is housed in a compact, surface-mount package, making it conducive for space-constrained designs. Its fast switching capabilities enhance overall system performance, allowing for higher frequency operations. Additionally, the IPD034N06N3 G includes a built-in gate protection feature that enhances reliability during operation.
Overall, this MOSFET is an ideal choice for designers seeking reliability and efficiency in high-power electronic circuits.

Features

The IPD034N06N3 G is a N-channel MOSFET designed for efficient power management in various applications. Key features include:
1. Voltage Rating: 60V, which makes it suitable for medium-voltage applications.
2. Current Rating: It can handle continuous drain currents up to 34A, allowing it to manage significant power loads.
3. Low RDS(on): With a low on-resistance (around 0.034 ohms), it minimizes power losses during operation, enhancing efficiency.
4. Fast Switching Speed: The device supports rapid switching, making it ideal for high-frequency applications.
5. Thermal Performance: It has a good thermal resistance, supporting higher current flow without overheating.
6. Package Type: Available in a TO-220 package, which facilitates easy mounting and heat dissipation.
Overall, the IPD034N06N3 G is well-suited for power switching, DC-DC converters, and other power management applications.

Package

The IPD034N06N3 G is typically packaged in a TO-220 format. This package type is designed for high power applications, providing efficient heat dissipation and easy mounting on heatsinks.

Pinout

The IPD034N06N3 G is a N-channel MOSFET used primarily in power management applications. It has a total of 5 pins.
The pin configuration and their functions are as follows:
1. Gate (G) - Controls the turning on and off of the MOSFET.
2. Drain (D) - The terminal through which the current flows out of the MOSFET.
3. Source (S) - The terminal through which the current flows into the MOSFET.
4. Body (B) - The intrinsic body diode, typically internally connected to the source.
This device is designed for low voltage applications, with a maximum V_DS rating of 60V and a continuous drain current rating of 34A, making it suitable for various switching applications.

Manufacturer

The IPD034N06N3 G is manufactured by Infineon Technologies AG, a German semiconductor manufacturer. Infineon specializes in providing semiconductor and system solutions for various applications including automotive, industrial power control, and security technology. The company is known for its focus on innovation and sustainability, producing products that enhance energy efficiency and contribute to the development of smart and connected systems. Infineon operates globally and is recognized for its high-performance semiconductor products, particularly in power management and automotive sectors.

Application

The IPD034N06N3 G is an N-channel MOSFET widely used in power management applications. Its key areas include DC-DC converters, power supplies, motor control, and industrial automation. It is suitable for high-efficiency switching in electric vehicles, renewable energy systems, and fast-switching applications due to its low on-resistance and high-speed performance.

Equivalent

The IPD034N06N3 G is a N-channel MOSFET. Equivalent products include:
1. IRF3205
2. STP34NF06
3. BSS138
4. FQP30N06L
Always verify specifications like Vds, Id, Rds(on), and package type for compatibility in your specific application.

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