IPB60R190C6

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IPB60R190C6

MOSFETs N-Ch 600V 20.2A D2PAK-2 CoolMOS C6

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Especificaciones

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Standard Pack Qty 1000

Descripción general

Description

The IPB60R190C6 is a high-performance N-channel MOSFET ( Metal-Oxide-Semiconductor Field-Effect Transistor) produced by Infineon Technologies. It is designed for power applications, featuring a maximum drain-source voltage of 600V and a continuous drain current of 190A at a temperature of 25°C.
Key specifications include a low R_DS(on) (on-resistance), which minimizes conduction losses and improves efficiency in power conversion applications. Its fast switching capabilities make it suitable for various applications, including power supplies, motor drives, and renewable energy systems.
The MOSFET is packaged in a TO-247 format, which allows for efficient heat dissipation. It also features a robust gate threshold voltage range, ensuring reliable operation under different conditions.
Overall, the IPB60R190C6 is ideal for demanding applications where efficiency, thermal performance, and reliability are crucial.

Features

The IPB60R190C6 is an N-channel MOSFET from Infineon's CoolMOS™ series, specifically designed for high-efficiency applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage applications.
2. R_DS(on): The on-resistance is low at 190 mΩ, which helps to minimize power losses during operation.
3. Current Rating: It can handle continuous drain current (I_D) up to 45A, suitable for various power conversion applications.
4. Fast Switching: Optimized for high-frequency operations, enhancing efficiency in switching power supplies and converters.
5. Thermal Performance: It comes in a TO-220 package, providing effective heat dissipation and easy mounting, which is essential for high-power applications.
6. Robustness: Designed to withstand harsh conditions, with excellent avalanche ratings and improved reliability.
Overall, the IPB60R190C6 is ideal for applications such as SMPS, industrial power supplies, and other high-efficiency designs.

Package

The IPB60R190C6 is packaged in a TO-247 format, which is a three-lead power transistor package commonly used for high-power applications.

Pinout

The IPB60R190C6 is an N-channel MOSFET manufactured by Infineon Technologies. It features a total of 6 pins. The pinout and functions are as follows:
1. Gate (G) - Controls the MOSFET's on/off state.
2. Drain (D) - The terminal through which the current flows when the device is on.
3. Source (S) - The terminal connected to the ground or low side in a circuit.
The device is designed for applications such as power management, DC-DC converters, and motor control due to its low on-resistance and high efficiency. It is rated for a maximum drain-source voltage (V_DS) of 600V and can handle a continuous drain current (I_D) of up to 190A under specific conditions. This makes it suitable for high-voltage and high-current applications.

Manufacturer

The IPB60R190C6 is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer based in Germany, specializing in semiconductor and system solutions for automotive, industrial, and IoT applications. The company produces a wide range of products, including power semiconductors, microcontrollers, and sensors, focusing on enhancing energy efficiency and performance in various electronic applications. Established in 1999, Infineon has become a key player in the semiconductor industry, emphasizing innovation and sustainability.

Application

The IPB60R190C6 is a high-voltage, N-channel MOSFET primarily used in power electronics applications, including:
1. DC-DC Converters: For efficient power conversion in renewable energy systems.
2. Motor Drives: In electric vehicles and industrial automation.
3. Switching Power Supplies: Enhancing efficiency in consumer electronics.
4. Inverters: For solar and energy storage systems.
5. Power Management Circuits: In various electronic devices for improved energy efficiency.

Equivalent

The IPB60R190C6 is an N-channel MOSFET. Equivalent products include the IRFB60R190, STP60NF190, and FDB60N190. Always verify specifications such as voltage, current ratings, and Rds(on) in datasheets to ensure compatibility for your specific application.

Envío

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Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

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