IPB180N04S4-H0

The IPB180N04S4-H0 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency applications. It features a maximum drain-source voltage (V_DS) of 40V and a continuous drain current (I_D) of 180A, making it suitable for use in power management and conversion circuits, such as inverters, DC-DC converters, and motor drives.
This MOSFET is characterized by low on-resistance (R_DS(on)), which helps minimize power losses during operation, enhancing overall system efficiency. Additionally, it has a fast switching speed, ideal for high-frequency applications.
The IPB180N04S4-H0 is typically packaged in TO-220 or similar packages, allowing for effective heat dissipation. It is widely used in automotive, industrial, and consumer electronics applications where robust performance and reliability are required.
When selecting this component, it’s essential to consider parameters such as thermal management, gate driving requirements, and switching characteristics to ensure optimal performance in your specific application.

The IPB180N04S4-H0 is an N-channel power MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: It supports a maximum drain-source voltage (V_DS) of 40V, making it suitable for various power management tasks.
2. Current Rating: It can handle continuous drain current (I_D) of up to 180A, allowing for significant power throughput.
3. On-Resistance: The device has a low on-resistance (R_DS(on)) of approximately 4.5 mΩ, which minimizes conduction losses and enhances efficiency.
4. Thermal Performance: With a high maximum junction temperature (T_j) rating, it provides reliable performance in demanding thermal conditions.
5. Fast Switching: Optimized for rapid switching applications, it reduces losses in high-frequency operation.
6. Package Type: Typically available in a TO-220 package, it facilitates effective heat dissipation.
7. Applications: Ideal for use in power supplies, motor drives, and other high-power switching applications.
These features make the IPB180N04S4-H0 suitable for both automotive and industrial applications, offering performance and efficiency.

The IPB180N04S4-H0 is packaged in a TO-220 format, which is a standard package type for power MOSFETs. This configuration allows for efficient heat dissipation and easy mounting on heatsinks in electronic applications.

The IPB180N04S4-H0 is a N-channel MOSFET from Infineon, specifically designed for high-performance applications. It features a TO-220 package with a pin count of three. The pin configuration is as follows:
1. Gate (G) - This pin is used to control the MOSFET. A voltage applied to this pin turns the device on or off.
2. Drain (D) - This pin connects to the load and is where the current flows out of the MOSFET when it is in the on state.
3. Source (S) - This pin is connected to the ground or the negative side of the power supply.
The device is rated for a maximum drain-source voltage (V_DS) of 40V and a continuous drain current (I_D) of 180A, making it suitable for high-current applications such as power supply circuits and motor drives.

The IPB180N04S4-H0 is manufactured by Infineon Technologies AG, a global semiconductor company headquartered in Neubiberg, Germany. Infineon specializes in the development and production of a wide range of semiconductor solutions, including power semiconductors, microcontrollers, and sensors. Their products are widely used across various industries, such as automotive, industrial, and communications, contributing to applications like energy efficiency, mobility, and security. Infineon is known for its innovation in power management and efficiency technologies, making it a key player in the semiconductor market.

The IPB180N04S4-H0 is a high-performance N-channel MOSFET primarily used in power management applications. Its applications include motor drives, power converters, DC-DC converters, and battery management systems. It is suitable for high-efficiency switching and can handle high current and voltage, making it ideal for automotive, industrial, and consumer electronics applications.

The IPB180N04S4-H0 is an N-channel MOSFET designed for high-efficiency applications. Equivalent products include:
1. IRLB3034 - similar voltage/current ratings.
2. STP180N04 - comparable specifications and usage.
3. BSC180N04 - same power ratings and application suitability.
Always verify specifications like RDS(on), VGS, and power ratings before substitution.