IPB180N04S4-00

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IPB180N04S4-00

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  • Mfr. Parte #IPB180N04S4-00
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Especificaciones

Technology Si
Packaging Reel
Brand Infineon Technologies
Product Type MOSFETs
Series OptiMOS-T2
Factory Pack Quantity:Factory Pack Quantity 1000
Subcategory Transistors
Part # Aliases IPB18N4S4XT SP000646176 IPB180N04S400ATMA1
Mounting Style SMD/SMT
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Height 4.4 mm
Length 10 mm
Width 9.25 mm
Unit Weight 0.056438 oz
Package / Case TO-263-7
Configuration Single
Tradename OptiMOS
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 40 V
Id - Continuous Drain Current 180 A
Rds On - Drain-Source Resistance 800 uOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2 V
Qg - Gate Charge 286 nC
Pd - Power Dissipation 300 W
Channel Mode Enhancement
Fall Time 58 ns
Rise Time 24 ns
Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 67 ns
Typical Turn-On Delay Time 53 ns
Qualification AEC-Q100
REACH - SVHC Details

Descripción general

Description

The IPB180N04S4-00 is a N-channel MOSFET designed for high-efficiency power management applications. It features a maximum drain-source voltage (V_DS) of 40V and a continuous drain current (I_D) of 180A, making it suitable for applications such as power supplies, motor drives, and DC-DC converters. The device is built with advanced trench technology, which minimizes on-resistance (R_DS(on)) for lower conduction losses, enhancing overall performance and thermal management.
With a gate threshold voltage (V_GS(th)) typically between 2V and 4V, it allows for easy driving with standard logic levels. The IPB180N04S4-00 also boasts fast switching speeds, reducing transition losses and improving efficiency in high-frequency applications. The package is typically available in a TO-220 or similar form factor, supporting robust thermal dissipation.
Overall, the IPB180N04S4-00 is ideal for engineers seeking a reliable, high-performance MOSFET for demanding power applications.

Features

The IPB180N04S4-00 is an N-channel MOSFET designed for high-efficiency power applications. Here are its key features:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 40V, suitable for low-voltage applications.
2. Current Rating: The device can handle continuous drain current (I_D) up to 180A, making it capable of managing significant power loads.
3. R_DS(on): It boasts a low on-resistance (R_DS(on)) of approximately 4.5 mΩ, which helps reduce power losses and improve thermal efficiency.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 1V to 2.5V, allowing for efficient switching with low gate drive voltages.
5. Package: Typically comes in a DPAK or similar package, facilitating easy integration into circuit designs.
6. Applications: Ideal for use in power management, DC-DC converters, motor drives, and other high-performance switching applications.
These features contribute to its effectiveness in enhancing the efficiency and reliability of various electronic systems.

Package

The IPB180N04S4-00 is packaged in a TO-220 format, which is a common package type for power MOSFETs. This package provides good thermal performance and allows for efficient heat dissipation.

Pinout

The IPB180N04S4-00 is an N-channel MOSFET used in power management applications. It typically features a TO-220 package with three pins.
Pin Count and Functions:
1. Gate (G): This pin is used to control the MOSFET's operation by applying voltage. A positive voltage relative to the source allows current to flow between the drain and source.

2. Drain (D): This pin is connected to the load. It serves as the output where the current flows when the MOSFET is turned on.
3. Source (S): This pin is connected to ground or the negative side of the power supply. It serves as the return path for the current flowing through the drain.
In summary, the IPB180N04S4-00 has 3 pins—Gate, Drain, and Source—used for controlling and conducting current in electronic circuits.

Manufacturer

The manufacturer of the IPB180N04S4-00 is Infineon Technologies AG. Infineon is a global semiconductor manufacturer based in Germany, specializing in a wide range of products, including power semiconductors, microcontrollers, sensors, and automotive electronics. The company focuses on innovative solutions for various applications, including automotive, industrial, and security technologies. Infineon is known for its contributions to energy efficiency and smart technologies, supporting the growing demand for sustainable and connected systems.

Application

The IPB180N04S4-00 is an N-channel MOSFET primarily used in power applications such as DC-DC converters, motor drives, power management systems, and industrial automation. Its low on-resistance and high-speed switching capabilities make it suitable for applications in renewable energy systems, electric vehicles, and consumer electronics. Additionally, it is effective in reducing thermal losses and improving efficiency in power supply circuits.

Equivalent

The IPB180N04S4-00 is a N-channel MOSFET. Equivalent products include the STP180N04, IRF180, and FDB180N04. When selecting alternatives, ensure similar specifications such as voltage rating, current rating, RDS(on), and package type for compatibility in your application. Always consult the datasheets for detailed comparisons.

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DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

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