IPB014N06NATMA1

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IPB014N06NATMA1

MOSFET N-CH 60V 34A/180A TO263-7

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Especificaciones

Series OptiMOS™
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 34A (Ta), 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 1.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 2.8V @ 143µA
Gate Charge (Qg) (Max) @ Vgs 106 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7800 pF @ 30 V
Power Dissipation (Max) 3W (Ta), 214W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-7
Package / Case TO-263-7, D2PAK (6 Leads + Tab)
Base Product Number IPB014

Descripción general

Description

IPB014N06NATMA1 is a specific part number that likely refers to a type of power semiconductor, particularly a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) used in various electronic applications. It typically features attributes such as low on-resistance, high-speed switching capabilities, and robust thermal performance, making it suitable for power management in devices like power supplies, motor drives, and inverters.
These transistors are essential in enhancing efficiency and performance in electronic circuits, often found in consumer electronics, automotive systems, and industrial applications. It's crucial to consult the datasheet for IPB014N06NATMA1 for detailed specifications, including its voltage and current ratings, thermal characteristics, and package type, to ensure proper application and integration into circuits.

Features

The IPB014N06NATMA1 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency switching applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 60V, making it suitable for various power applications.
2. Current Rating: Continuous drain current (I_D) of up to 14A, allowing for substantial load handling.
3. On-Resistance: Low R_DS(on) of approximately 4.3 mΩ at V_GS of 10V, improving efficiency by reducing power loss during operation.
4. Gate Threshold Voltage: V_GS(th) between 1.5V to 2.5V, facilitating easy drive with low gate voltage levels.
5. Package Type: Available in a TO-220 package, providing efficient heat dissipation and ease of PCB mounting.
6. High-Speed Switching: Suitable for applications in switching power supplies, motor drives, and other power management systems.
Overall, the IPB014N06NATMA1 offers a combination of high performance, efficiency, and thermal management, making it ideal for various electronic applications.

Package

The IPB014N06NATMA1 is packaged in a TO-220 form factor. This package type is designed for power applications, providing efficient thermal management and easy mounting on heatsinks.

Pinout

The IPB014N06NATMA1 is an N-channel MOSFET with a total of 6 pins. Its primary function is to act as a high-efficiency switch in various power management applications.
### Pin Configuration:
1. Gate (G): Controls the switching of the MOSFET.
2. Drain (D): The output terminal where the load is connected.
3. Source (S): The terminal that connects to ground or the negative side of the power source.
4. Gate (G): (Second instance for dual gate variety, if applicable).
5. Drain (D): (Second instance for dual drain variety, if applicable).
6. Source (S): (Second instance for dual source variety, if applicable).
### Key Features:
- Low R_DS(on) for improved efficiency.
- High current carrying capability.
- Suitable for applications like DC-DC converters and motor drivers.
For specific applications and configurations, please refer to the manufacturer's datasheet for detailed electrical characteristics and performance parameters.

Manufacturer

The manufacturer of the IPB014N06NATMA1 is Infineon Technologies AG. Infineon is a global semiconductor company based in Germany, specializing in power semiconductors, microcontrollers, and sensor solutions. Founded in 1999 as a spin-off from Siemens AG, Infineon focuses on providing innovative technologies for various applications, including automotive, industrial, and consumer electronics. Their products are essential for energy efficiency, mobility, and security in modern electronic systems. Infineon is known for its strong emphasis on research and development, continually advancing semiconductor technology to meet the demands of a rapidly evolving market.

Application

The IPB014N06NATMA1 is a N-channel MOSFET primarily used in power management applications. Its key areas include DC-DC converters, motor drives, power supplies, and inverters. It is suitable for automotive, industrial, and consumer electronics due to its high efficiency, low on-resistance, and fast switching capabilities.

Equivalent

The IPB014N06NATMA1 is a N-channel MOSFET from Infineon. Equivalent products include the STP14NM06, FQP14N06L, IRF140, and BSS140. Always verify specifications such as voltage, current rating, and package type to ensure compatibility for your specific application.

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