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IPA029N06NXKSA1
MOSFET N-CH 60V 84A TO220-FP
- Fabricante
- Mfr. Parte #IPA029N06NXKSA1
- Paquete PG-TO220-3
- Hoja de datos IPA029N06NXKSA1 DataSheet
- En stock6847
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Especificaciones
| Package | Tube |
| Series | OptiMOS™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 60 V |
| Current-ContinuousDrain(Id)@25°C | 84A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 6V, 10V |
| RdsOn(Max)@IdVgs | 2.9mOhm @ 84A, 10V |
| Vgs(th)(Max)@Id | 3.3V @ 75µA |
| GateCharge(Qg)(Max)@Vgs | 66 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 5125 pF @ 30 V |
| PowerDissipation(Max) | 38W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | PG-TO220-FP |
Descripción general
Description
Key specifications often include input voltage range, output current capability, and thermal performance. Such ICs are widely used in consumer electronics, automotive systems, and industrial applications where efficient power management is crucial. For detailed specifications and application guidelines, consulting the manufacturer's datasheet is recommended.
Features
1. Voltage Rating: It typically supports a drain-source voltage (V_DS) of 60V, making it suitable for various power applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of up to 29A, ensuring it can manage significant power loads.
3. Low On-Resistance: It has a low R_DS(on) value, which reduces power losses during operation and enhances efficiency.
4. Fast Switching Speed: The MOSFET features rapid switching capabilities, making it ideal for high-frequency applications.
5. Thermal Performance: It has excellent thermal characteristics, allowing for higher performance in thermal management.
6. Package Type: Typically available in a TO-220 or similar package, facilitating easy heat dissipation and mounting.
Overall, the IPA029N06NXKSA1 is suitable for power management, switching, and amplification in various electronic circuits.
Package
Pinout
1. Gate (G): Controls the MOSFET operation (turning it on/off).
2. Drain (D): The terminal through which the load current flows.
3. Source (S): The terminal connected to ground in a typical application, serving as the return path for the current.
4. Body Diode: Internal structure that allows current to flow from Drain to Source when the MOSFET is off, providing protection against back EMF in inductive loads.
This device is used in various applications including power management, switching regulators, and motor drives due to its high efficiency and low on-resistance characteristics.
Manufacturer
Application
Equivalent
Envío
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DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.
FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.
Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.
Pagos
Payment Methods
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Actualmente, solo aceptamos los siguientes métodos de pago:
1. de PayPal
2. Tarjeta de crédito/débito
3. Transferencia bancaria
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