IHW20N135R5

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IHW20N135R5

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Especificaciones

Packaging Tube
Standard Pack Qty 240

Descripción general

Description

The IHW20N135R5 is a high-voltage N-channel MOSFET designed for power applications requiring efficient switching. It belongs to Infineon's CoolMOS™ technology family, specifically optimized for high efficiency and low switching losses, making it ideal for use in power supplies, converters, and other power management applications.
Key specifications include a maximum drain-source voltage (VDS) of 1350V, a continuous drain current (ID) of 20A, and low RDS(on), which minimizes conduction losses. Its fast switching capabilities help in reducing electromagnetic interference (EMI) and enhance overall system performance.
The IHW20N135R5 is suitable for a range of applications, including renewable energy systems, industrial drives, and automotive power converters, due to its high reliability and robust design. It's designed to operate efficiently under challenging conditions, making it a popular choice among engineers for advanced power electronic designs.

Features

The IHW20N135R5 is a high-voltage IGBT (Insulated Gate Bipolar Transistor) designed for various power electronics applications. Key features include:
1. Voltage Rating: 1350V, making it suitable for high-voltage applications.
2. Current Rating: 20A, enabling it to handle significant power loads.
3. Low On-Resistance: Offers efficient performance and reduced power dissipation during operation.
4. Fast Switching Speeds: Facilitates efficient switching in inverter and converter circuits, improving overall system performance.
5. Thermal Performance: Designed to operate effectively in high-temperature environments, with good thermal stability.
6. Robust Construction: Features a reliable package that ensures durability in demanding applications.
7. Applications: Commonly used in motor drives, power supplies, and renewable energy systems like solar inverters.
Overall, the IHW20N135R5 is an effective component for enhancing efficiency in various industrial power applications.

Package

The IHW20N135R5 is typically available in a TO-247 package type. This is a standardized package used for high-power semiconductor devices, providing efficient heat dissipation and mechanical stability.

Pinout

The IHW20N135R5 is a high-voltage power MOSFET designed for use in various applications, including industrial and automotive sectors. It typically features a TO-247 package with three pins.
The pin configuration and functions are as follows:
1. Gate (G): This pin controls the switching of the MOSFET. A voltage applied here determines whether the device is in the on or off state.

2. Drain (D): This pin is where the load is connected, and it carries the current from the drain to the source when the device is in the on state.
3. Source (S): This pin is connected to the ground or the negative side of the power supply. It acts as the return path for current flowing through the MOSFET.
In summary, the IHW20N135R5 has a three-pin configuration with Gate, Drain, and Source pins, serving essential functions for controlling power switching in electronic circuits.

Manufacturer

The IHW20N135R5 is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer headquartered in Neubiberg, Germany. The company specializes in power semiconductors, microcontrollers, and other electronic components, primarily serving automotive, industrial, and communication sectors. Infineon is known for its innovations in efficiency and performance, focusing on applications such as electric vehicles, renewable energy, and smart technologies. The IHW20N135R5 is a part of their IGBT (Insulated Gate Bipolar Transistor) product line, designed for high-performance switching applications.

Application

The IHW20N135R5 is a high-voltage IGBT (Insulated Gate Bipolar Transistor) used in various applications, including industrial motor drives, power inverters for renewable energy systems, welding equipment, and high-efficiency power supplies. It is also suitable for applications requiring high-speed switching and high power density, such as electric vehicles and rail traction systems. Its ability to handle high voltages and currents makes it ideal for demanding power electronics applications.

Equivalent

The IHW20N135R5 is an IGBT (Insulated Gate Bipolar Transistor) manufactured by Infineon. Equivalent products include the Infineon IHW20N120R5, the Mitsubishi CM200DU-12F, and the ON Semiconductor NGTB20N135. Always verify specifications like voltage, current, and switching characteristics before substitution.

Envío

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Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

Pagos

Payment Methods

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2. Tarjeta de crédito/débito

3. Transferencia bancaria

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