HGTG30N60A4D

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HGTG30N60A4D

IGBT 600V 75A TO-247-3

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Especificaciones

Part Status Obsolete
Base Product Number HGTG30N60
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 75 A
Current - Collector Pulsed (Icm) 240 A
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 30A
Power - Max 463 W
Switching Energy 280µJ (on), 240µJ (off)
Input Type Standard
Gate Charge 225 nC
Td (on/off) @ 25°C 25ns/150ns
Test Condition 390V, 30A, 3Ohm, 15V
Reverse Recovery Time (trr) 55 ns
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package TO-247-3
Supplier Device Package TO-247-3
Packaging Tube

Descripción general

Description

The HGTG30N60A4D is a high-voltage, high-speed N-channel MOSFET designed for power switching applications. It features a maximum drain-source voltage (Vds) of 600V and a continuous drain current (Id) rating of 30A, making it suitable for use in various power electronics circuits, including industrial, automotive, and renewable energy systems.
Key specifications include a low on-resistance (Rds(on)), which improves efficiency by reducing power loss during operation. The device also supports fast switching speeds, enhancing performance in applications such as DC-DC converters and inverter circuits. Its robust design helps to manage thermal performance effectively, ensuring reliable operation under demanding conditions.
The HGTG30N60A4D is often used in applications requiring high power efficiency and reliability, such as motor drives, power supplies, and induction heating systems. Proper thermal management and suitable gate driving techniques are essential for optimizing its performance in practical applications.

Features

The HGTG30N60A4D is a high-performance N-channel MOSFET designed for various power applications. Key features include:
1. Voltage Rating: Operates at a maximum drain-source voltage (Vds) of 600V, suitable for high-voltage applications.
2. Current Rating: Capable of handling continuous drain currents up to 30A, making it ideal for power management.
3. RDS(on): Low on-resistance (typically around 0.15 ohms), which minimizes conduction losses and improves efficiency.
4. Fast Switching: Designed for rapid switching capabilities, enhancing performance in high-frequency applications.
5. Thermal Resistance: Features low thermal resistance to ensure efficient heat dissipation, contributing to reliability and longevity.
6. Package Type: Available in a TO-247 package, which provides good thermal performance and ease of mounting.
7. Applications: Commonly used in motor drives, power supplies, and other industrial applications.
These characteristics make the HGTG30N60A4D suitable for demanding environments where efficiency and reliability are crucial.

Package

The HGTG30N60A4D is typically housed in a TO-247 package type. This package is designed for high-power applications, providing good thermal performance and ease of mounting.

Pinout

The HGTG30N60A4D is a N-channel IGBT (Insulated Gate Bipolar Transistor) with a pin count of 4. The pin configuration and their functions are as follows:
1. Gate (G) - This pin is used to control the switching of the IGBT. A voltage applied to the gate allows the device to conduct.
2. Collector (C) - The collector pin is where the main current flows into the device when it is in the 'on' state.
3. Emitter (E) - This pin is where the current flows out of the device. It is connected to ground in typical applications.
4. Thermal Pad (T) - Often used for mounting or heat dissipation, this is not a pin in the traditional sense, but it helps manage the thermal performance of the device.
The HGTG30N60A4D is rated for 600V and 30A, making it suitable for high-power switching applications.

Manufacturer

The HGTG30N60A4D is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer headquartered in Neubiberg, Germany. The company specializes in designing and producing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, sensors, and security ICs. Infineon serves various industries such as automotive, industrial, and consumer electronics, focusing on innovation and sustainability in its products. The HGTG30N60A4D is a high-voltage, high-speed IGBT (Insulated Gate Bipolar Transistor) designed for applications like motor drives and power converters, showcasing Infineon’s expertise in power management and efficiency.

Application

The HGTG30N60A4D is a high-voltage N-channel MOSFET primarily used in power electronics applications. Its key areas include switch-mode power supplies (SMPS), motor drives, inverters for renewable energy systems, and industrial automation. It is suitable for high-efficiency, high-frequency applications due to its low on-resistance and fast switching capabilities.

Equivalent

The HGTG30N60A4D is an N-channel IGBT used in power applications. Equivalent products include the following models:
1. FGH30N60SFD
2. IGBT30N60
3. IRG4PH50K
Always verify specifications and performance in your specific application requirements.

Envío

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DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

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