H5TQ4G63EFR-RDC

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H5TQ4G63EFR-RDC

4Gbit 1.425V~1.575V 1.066GHz DDR3 SDRAM FBGA-96 Memory (ICs) RoHS

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Especificaciones

Packaging FBGA-96
Clock Frequency 1.066GHz
Memory Format DDR3 SDRAM
Memory Size 4Gbit
Operating temperature 0℃~+95℃
Voltage - Supply 1.425V~1.575V

Descripción general

Description

The H5TQ4G63EFR-RDC is a type of DRAM (Dynamic Random Access Memory) chip manufactured by Hynix, specifically designed for high-performance applications. It is typically used in mobile devices, laptops, and various consumer electronics due to its low power consumption and high speed. This specific model features a DDR3 (Double Data Rate 3) interface, which allows for faster data transfer rates compared to earlier generations.
The "H5" prefix indicates the manufacturer, while the "TQ" denotes the chip's specific configuration and features. The "4G" refers to its capacity of 4 gigabits, and "63" indicates the chip's architecture. The "EFR" signifies that it is optimized for extended performance and reliability, and "RDC" may refer to specific operational characteristics or packaging.
Overall, the H5TQ4G63EFR-RDC is a crucial component in modern computing architectures, supporting the demand for speed and efficiency in data processing and storage.

Features

The H5TQ4G63EFR-RDC is a 64Mb (8MB) DDR2 SDRAM memory chip, typically used in various electronic applications such as smartphones, tablets, and other portable devices. Key features include:
1. Density: 64 Megabits (8 Megabytes) of storage capacity.
2. Memory Type: DDR2 (Double Data Rate 2), providing faster data transfer rates compared to its predecessor, DDR.
3. Interface: 1.8V power supply, enabling lower power consumption and greater efficiency.
4. Speed: Operates at data rates up to 400 Mbps, enhancing overall system performance.
5. Organization: Typically organized in a 4 Meg x 16 configuration, allowing for efficient data access.
6. Package: Offered in a compact FBGA (Fine Ball Grid Array) package, facilitating integration into tight spaces.
7. Thermal Performance: Designed for reliable operation across a range of temperatures.
These features make the H5TQ4G63EFR-RDC suitable for a variety of memory-intensive applications while optimizing performance and energy efficiency.

Package

The H5TQ4G63EFR-RDC is a type of DDR3 SDRAM memory chip packaged in a 78-ball FBGA (Fine Ball Grid Array) format. This packaging provides a compact and efficient way to integrate the memory into electronic devices.

Pinout

The H5TQ4G63EFR-RDC is a 4Gb (Gigabit) DDR3 SDRAM memory chip, specifically designed for use in various computing applications. It typically comes in a 78-ball FBGA (Fine Ball Grid Array) package, which means it has a total of 78 pins (or balls) for connectivity.
The key functions of the H5TQ4G63EFR-RDC include:
1. Data Storage: It provides a high-density storage solution for data in electronic devices.
2. Memory Access: It supports wide data buses for fast data transfer rates, making it suitable for high-performance applications.
3. Power Efficiency: Designed to operate at lower voltages, thus reducing power consumption compared to older memory technologies.
4. Compatibility: It is compatible with various DDR3 memory controllers and can be used in systems requiring multiple memory chips.
For specific pin assignments and functions, refer to the manufacturer's datasheet.

Manufacturer

The H5TQ4G63EFR-RDC is manufactured by SK Hynix Inc. SK Hynix is a South Korean multinational company that specializes in the production of semiconductors. It is one of the largest manufacturers of memory chips in the world, producing dynamic random-access memory (DRAM), NAND flash memory, and various other semiconductor products. Founded in 1983, SK Hynix plays a crucial role in the global electronics supply chain, providing memory solutions for smartphones, computers, and other devices. The company is recognized for its innovation and technological advancements in memory technology.

Application

The H5TQ4G63EFR-RDC is a DRAM (Dynamic Random-Access Memory) component primarily used in various applications such as mobile devices, consumer electronics, and computing systems. Its features make it suitable for smartphones, tablets, laptops, and embedded applications where high performance and energy efficiency are critical. Additionally, it may be utilized in IoT devices and automotive electronics requiring reliable memory solutions.

Equivalent

The H5TQ4G63EFR-RDC is a 4Gb DDR3 SDRAM memory chip. Equivalent products include the Micron MT41J256M16HA-125:E, Samsung K4B4G1646F-BCK0, and Nanya NT5CB256M16DP-DI. Always verify specifications such as voltage, speed, and package type when considering equivalents.

Envío

Métodos de envíoNosotros

ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.


Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

Pagos

Payment Methods

El plazo de pago es 100% prepagado.

Actualmente, solo aceptamos los siguientes métodos de pago:

1. de PayPal

2. Tarjeta de crédito/débito

3. Transferencia bancaria

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