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H26M62002JPR
32GB eMMC 5.1 FBGA-96 Memory (ICs) RoHS
- Fabricante
- Mfr. Parte #H26M62002JPR
- Paquete
- Hoja de datos H26M62002JPR DataSheet
- En stock24604
100% original & Nuevo
24 horas listos para el envío
Garantía de 365 días
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Especificaciones
| Packaging | FBGA-96 |
| Controller Operating Voltage (VCCQ) | 1.7V~1.95V |
| Controller Stand-By Current | 120uA |
| Interface | eMMC 5.1 |
| Memory Size | 32GB |
| NAND Operating Voltage (VCCF) | 2.7V~3.6V |
| NAND Stand-By Current | 60uA |
| Operating temperature | -25℃~+85℃ |
| Reading Speed in Sequence | 280MB/S |
| Writing Speed in Sequence | 90MB/S |
Descripción general
Description
The designation "H26M" refers to the general family of the memory chip, while "62002" indicates specific characteristics such as its architecture and manufacturing process. The "JPR" suffix often denotes packaging and speed grade.
H26M62002JPR is designed to provide high-speed data processing and efficient performance, aligning with the demands of modern computing applications. It utilizes advanced fabrication technologies to enhance reliability and power efficiency, making it suitable for high-performance and embedded systems.
Overall, this DRAM chip plays a crucial role in enabling devices to run smoothly by facilitating quick data access and storage.
Features
1. Memory Structure: It utilizes a NAND architecture, providing efficient storage density and performance.
2. Access Time: Offers fast read access times, typically around 25 ns, enabling quick data retrieval.
3. Data Management: Supports advanced error correction features, enhancing data reliability.
4. Endurance: Designed for high endurance, allowing a substantial number of program/erase cycles, typically up to 100,000.
5. Power Consumption: Low power operation modes help in energy conservation, making it suitable for battery-powered devices.
6. Interface: Compatible with standard NAND Flash interfaces, facilitating easy integration into various systems.
7. Temperature Range: Operates effectively across a wide temperature range, making it suitable for industrial applications.
These features make the H26M62002JPR suitable for applications in consumer electronics, automotive, and industrial sectors where reliable memory is essential.
Package
Pinout
The primary functions of the H26M62002JPR include:
- Data Storage: It is designed for high-density storage applications, suitable for consumer electronics, mobile devices, and industrial applications.
- Data Transfer: Supports reliable data transfer rates, with an interface compatible with various systems.
- Erase and Write Operations: Capable of performing multiple erase and write cycles, essential for efficient data management.
This NAND Flash is typically used in applications requiring reliable, high-capacity memory solutions.
Manufacturer
Application
Equivalent
Envío
Métodos de envíoNosotros
ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.
Referencia de tarifas de envío (DHL/FedEx):
DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.
FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.
Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.
Pagos
Payment Methods
El plazo de pago es 100% prepagado.
Actualmente, solo aceptamos los siguientes métodos de pago:
1. de PayPal
2. Tarjeta de crédito/débito
3. Transferencia bancaria
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