H26M52103FMR

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H26M52103FMR

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  • Mfr. Parte #H26M52103FMR
  • Paquete
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  • En stock9338

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Especificaciones

Manufacturer JLCPCB Assembly
Package BGA153

Descripción general

Description

H26M52103FMR is a type of NAND flash memory chip, specifically designed for use in various electronic applications, including consumer electronics, mobile devices, and embedded systems. It typically features a high storage capacity, low power consumption, and fast read/write speeds, making it suitable for data-intensive tasks. The "H26M" prefix usually indicates the manufacturer and family of the product, while "52103" designates its specific model or capacity.
The "FMR" suffix may refer to specific features or performance ratings, such as factory-matched reliability or particular operating conditions. This type of memory is non-volatile, meaning it retains data even when power is removed, which is essential for applications requiring persistent data storage.
In summary, H26M52103FMR is a versatile NAND flash component characterized by its efficiency and reliability for modern digital storage needs.

Features

The H26M52103FMR is a 512Mb (64MB) NAND Flash memory chip designed for various applications, including mobile devices and consumer electronics. Key features include:
1. Architecture: It utilizes a 2-bit multilevel cell (MLC) architecture, allowing for efficient data storage.

2. Interface: The chip supports a parallel interface, facilitating easy integration with microcontrollers and processors.
3. Access Speed: It offers fast read and write speeds, enhancing overall system performance.
4. Endurance: The device supports a substantial number of program/erase cycles, typically around 10,000 cycles, ensuring durability.
5. Data Retention: It provides reliable data retention, typically up to 10 years under specified conditions.
6. Power Management: The H26M52103FMR is optimized for low power consumption, making it suitable for battery-operated devices.
These features make it a versatile choice for applications requiring efficient, high-capacity storage solutions.

Package

The H26M52103FMR is a memory chip packaged in a FBGA (Fine Ball Grid Array) format. This compact package type is designed for high-density applications, providing improved thermal performance and reduced footprint, commonly used in mobile and embedded systems.

Pinout

The H26M52103FMR is a 2 Gb (gigabit) NAND flash memory device with a pin count of 48 pins. It is typically packaged in an FBGA (Fine Ball Grid Array) format.
The primary functions of the device include data storage and a range of memory operations such as read, write, and erase. It features a page size of 4 KB and supports a block management system that facilitates efficient data handling and error correction. The device operates on a supply voltage typically ranging from 2.7V to 3.6V, making it suitable for various applications, including consumer electronics, mobile devices, and solid-state drives (SSDs).
Overall, the H26M52103FMR provides high-density storage with reliable performance, essential for modern digital applications.

Manufacturer

The H26M52103FMR is manufactured by Hynix Semiconductor, now known as SK hynix Inc. It is a South Korean company that specializes in the production of memory semiconductors, including DRAM (Dynamic Random Access Memory) and NAND flash memory. SK hynix is one of the largest memory chip manufacturers in the world and is a key player in the semiconductor industry. The company develops various memory solutions for a wide range of applications, including computers, mobile devices, and servers, contributing significantly to advancements in technology and data storage solutions.

Application

The H26M52103FMR is a 2 Gb NAND flash memory device used in various application areas such as mobile phones, tablets, and other portable devices for data storage. It is also utilized in consumer electronics, solid-state drives (SSDs), automotive applications, and industrial equipment, providing high-density storage solutions for firmware, applications, and user data.

Equivalent

The H26M52103FMR chip is a 2Gb DDR3 SDRAM memory device. Equivalent products include:
1. MT41J1G16HA-125:E (Micron)
2. K4B4G1646F-BCK0 (Samsung)
3. IS42S16400B-7B (ISSI)
Always verify compatibility based on specifications and application requirements.

Envío

Métodos de envíoNosotros

ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.


Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

Pagos

Payment Methods

El plazo de pago es 100% prepagado.

Actualmente, solo aceptamos los siguientes métodos de pago:

1. de PayPal

2. Tarjeta de crédito/débito

3. Transferencia bancaria

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