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FQPF7N80C
MOSFET N-CH 800V 6.6A TO220F
- Fabricante
- Mfr. Parte #FQPF7N80C
- Paquete TO-220-3
- Hoja de datos FQPF7N80C DataSheet
- En stock3784
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Especificaciones
| Package | Bulk,Tube |
| Series | QFET® |
| ProductStatus | Obsolete |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 800 V |
| Current-ContinuousDrain(Id)@25°C | 6.6A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 1.9Ohm @ 3.3A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 35 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 1680 pF @ 25 V |
| PowerDissipation(Max) | 56W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220F-3 |
Descripción general
Description
The FQPF7N80C is packaged in a TO-220 format, facilitating heat dissipation and easy mounting to heat sinks. Key specifications include a gate threshold voltage (V_GS(th)) of 2-4V and a maximum gate-source voltage (V_GS) of ±20V. This MOSFET offers reliable performance in demanding environments, making it a popular choice for engineers in power electronics design. Overall, the FQPF7N80C balances high voltage handling with excellent efficiency, making it suitable for a variety of applications.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 800V, making it suitable for high-voltage applications.
2. Current Handling: The device can handle continuous drain current (I_D) up to 7A, which is beneficial for power management in circuits.
3. Low R_DS(on): It features a low on-resistance (R_DS(on)) of around 0.8 ohms, which minimizes conduction losses and improves efficiency.
4. Fast Switching: The FQPF7N80C is designed for fast switching, aiding in applications like switch-mode power supplies (SMPS) and inverters.
5. Thermal Characteristics: It includes a high thermal resistance, allowing for effective heat dissipation.
6. Package Type: Typically available in a TO-220 package, enabling easy mounting and heat sinking.
This combination of features makes the FQPF7N80C ideal for use in various electronic applications, including power supplies, motor drives, and other high-voltage circuits.
Package
Pinout
1. Gate (G): This pin is used to control the MOSFET. A voltage applied here allows current to flow from the drain to the source.
2. Drain (D): This is the terminal where the current enters the MOSFET. It connects to the load and allows current to flow when the device is on.
3. Source (S): This pin is the terminal through which current exits the MOSFET, typically connected to ground or the negative side of the power supply.
The FQPF7N80C is rated for high voltage (up to 800V) and is commonly used in power switching applications. It features low on-resistance and fast switching capabilities, making it suitable for various electronic circuits.
Manufacturer
Application
Equivalent
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