FQPF6N80C

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FQPF6N80C

MOSFET N-CH 800V 5.5A TO220F

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Especificaciones

Package Tube
Series QFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 800 V
Current-ContinuousDrain(Id)@25°C 5.5A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 2.5Ohm @ 2.75A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 30 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 1310 pF @ 25 V
PowerDissipation(Max) 51W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220F-3

Descripción general

Description

The FQPF6N80C is a power MOSFET (metal-oxide-semiconductor field-effect transistor) designed for high-voltage applications. It features a voltage rating of 800V and a continuous drain current of 6A, making it suitable for use in power supply circuits, motor control, and other high-voltage switching applications. The device has a low on-resistance (R_DS(on)), which enhances its efficiency by minimizing power loss during operation.
With its fast switching speeds, the FQPF6N80C is ideal for use in circuits requiring quick turn-on and turn-off capabilities, leading to improved performance in applications such as inverters and converters. It is housed in a TO-220 package, facilitating easy heat dissipation and integration into various PCB designs.
The FQPF6N80C is characterized by its high reliability and robustness, making it a preferred choice for engineers in the design of energy-efficient systems. Its specifications make it suitable for both industrial and consumer electronic applications where high voltage and power handling are required.

Features

The FQPF6N80C is an N-channel MOSFET designed for high-voltage applications. Key features include:
1. Voltage Rating: It can handle up to 800V, making it suitable for various high-voltage applications.
2. Continuous Drain Current: It supports a maximum continuous drain current of 6A, depending on thermal management.
3. RDS(on): It offers a low on-resistance (RDS(on)) of around 0.8Ω at a gate-source voltage (VGS) of 10V, enhancing efficiency.
4. Fast Switching: The device is optimized for high-speed switching applications, reducing switching losses.
5. Thermal Resistance: It has a low thermal resistance, allowing for better heat dissipation and improved reliability.
6. Package Type: Available in a TO-220 package, which facilitates easy heat sinking and mounting.
These features make the FQPF6N80C suitable for use in power supplies, motor control, and other applications requiring efficient switching and high voltage handling.

Package

The FQPF6N80C is typically available in a TO-220 package type. This package is known for its good thermal performance and ease of heat sinking, making it suitable for power applications.

Pinout

The FQPF6N80C is a N-channel MOSFET designed for high voltage applications. It typically comes in a TO-220 package, which has a pin count of three. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET operation. A positive voltage applied here turns the device on.

2. Drain (D): This pin is where the load is connected. The current flows from the drain to the source when the MOSFET is on.
3. Source (S): This pin is connected to ground or the lower potential in the circuit. The current exits through this pin when the device is conducting.
The FQPF6N80C is rated for a maximum drain-source voltage of 800V and a continuous drain current of 6A, making it suitable for applications in power supplies, motor drives, and other high-voltage circuits.

Manufacturer

The FQPF6N80C is manufactured by Fairchild Semiconductor, which is now part of ON Semiconductor. Fairchild Semiconductor was a prominent company known for its development of semiconductor components and integrated circuits, particularly in the power management and analog markets. It specialized in producing a wide range of electronic components, including MOSFETs, diodes, and other power semiconductor devices. The company focused on innovation and provided solutions for various industries, including automotive, industrial, and consumer electronics. ON Semiconductor, its parent company, continues to offer a vast portfolio of semiconductor solutions globally.

Application

The FQPF6N80C is a N-channel MOSFET used primarily in power electronics applications, including switch-mode power supplies, DC-DC converters, motor control systems, and high-frequency switching applications. Its high voltage and current ratings make it suitable for use in electronic devices requiring efficient power management and thermal performance.

Equivalent

The FQPF6N80C is an N-channel MOSFET with a voltage rating of 800V and a current rating of 6A. Equivalent products include the STP6NK80Z, IRF840, and MRF6VP11K. Always check specific characteristics such as RDS(on), package type, and thermal performance to ensure compatibility for your application.

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