FQPF3N80C

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FQPF3N80C

MOSFET N-CH 800V 3A TO220F

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Especificaciones

Package Tube
Series QFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 800 V
Current-ContinuousDrain(Id)@25°C 3A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 4.8Ohm @ 1.5A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 16.5 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 705 pF @ 25 V
PowerDissipation(Max) 39W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220F-3

Descripción general

Description

The FQPF3N80C is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-performance switching applications. It features an N-channel configuration, enabling efficient control of electrical power in various circuits. With a maximum drain-source voltage of 800V and a continuous drain current rating of 3A, it is suitable for high-voltage applications, including power supplies, motor drives, and lighting control systems.
The device is characterized by low on-resistance (RDS(on)) and fast switching times, which contribute to improved efficiency and reduced heat generation in electronic designs. The FQPF3N80C is typically packaged in a TO-220 form factor, facilitating effective heat dissipation.
Key specifications include a threshold voltage (VGS(th)) of 2-4V, maximum gate-source voltage of ±20V, and a maximum junction temperature of 150°C. This MOSFET is widely used in both consumer and industrial applications, making it a reliable choice for engineers designing robust electronic systems.

Features

The FQPF3N80C is an N-channel MOSFET designed for high-voltage applications. Key features include:
1. Voltage Rating: It can handle a drain-source voltage (V_DS) of up to 800V, making it suitable for high-voltage circuits.
2. Current Rating: With a continuous drain current (I_D) of 3A, it provides reliable performance in various applications.
3. On-Resistance: The R_DS(on) is low, typically around 0.7 ohms, which minimizes power loss during operation.
4. Gate Threshold Voltage (V_GS(th)): Typically ranges from 2 to 4V, allowing for efficient switching.
5. Fast Switching Speed: Ideal for applications requiring rapid on/off switching, such as power converters and inverters.
6. Package Type: Available in a TO-220 package, facilitating heat dissipation and easy mounting.
These features make the FQPF3N80C suitable for use in power supplies, motor drivers, and other high-voltage electronic devices.

Package

The FQPF3N80C is typically packaged in a TO-220 format, which is a commonly used package type for power MOSFETs. This package facilitates efficient heat dissipation and makes it suitable for various applications in power electronics.

Pinout

The FQPF3N80C is an N-channel MOSFET with a pin count of 3. Its pin configuration typically includes:
1. Gate (G) - The control terminal that regulates the flow of current between the drain and source.
2. Drain (D) - The terminal where the output current flows out when the MOSFET is in the "on" state.
3. Source (S) - The terminal where the input current enters when the MOSFET is conducting.
This MOSFET is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 800V and a continuous drain current (I_D) rating of 3A. Its primary function is to act as a switch or amplifier in electronic circuits, enabling effective control of power and signal levels.

Manufacturer

The FQPF3N80C is manufactured by Fairchild Semiconductor, a company known for designing and manufacturing a wide range of semiconductor products. Fairchild is recognized for its innovations in the field of power management, analog, and digital semiconductor solutions. The company specializes in providing high-performance components for various applications, including consumer electronics, automotive, industrial, and communication devices. Fairchild Semiconductor is now a part of ON Semiconductor, which acquired the company in 2016, further expanding its portfolio and capabilities in the semiconductor industry.

Application

The FQPF3N80C is a N-channel MOSFET primarily used in power electronics applications. Its main areas of application include switching power supplies, motor controllers, and inverters for renewable energy systems. It is also suitable for high-voltage applications in automotive electronics and industrial equipment due to its high breakdown voltage and low on-resistance characteristics.

Equivalent

The FQPF3N80C is a N-channel MOSFET with a voltage rating of 800V and a current rating of 3A. Equivalent products include the IRF840, STP8NK80Z, and AOD8N80. Always verify specifications such as R_DS(on) and gate threshold voltage for compatibility in specific applications.

Envío

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