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FQPF12N60C
MOSFET N-CH 600V 12A TO220F
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- Mfr. Parte #FQPF12N60C
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Especificaciones
| Series | QFET® |
| Part Status | Obsolete |
| Base Product Number | FQPF1 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 650mOhm @ 6A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 2290 pF @ 25 V |
| Power Dissipation (Max) | 51W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220F-3 |
| Package | TO-220-3 Full Pack |
| Packaging | Tube |
Descripción general
Description
This MOSFET is commonly used in applications such as power supplies, motor control, and other circuits requiring efficient switching. The device is characterized by fast switching speeds, facilitating high-frequency operation. Additionally, its robust package options, typically in TO-220 or TO-247 formats, allow for effective heat dissipation.
The FQPF12N60C is often selected for applications in renewable energy systems, lighting systems, and various industrial automation processes where reliability and performance are critical. Proper thermal management and appropriate gate drive circuits are essential for optimal performance in practical applications.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage circuits.
2. Current Rating: The maximum continuous drain current (I_D) is 12A, allowing it to handle significant loads.
3. R_DS(on): The on-resistance is low (typically around 0.18 ohms), which reduces power loss and enhances efficiency during operation.
4. Gate Threshold Voltage: It has a gate threshold voltage (V_GS(th)) of 2-4V, facilitating easier drive with standard logic levels.
5. Package Type: Available in a TO-220 package, it provides excellent thermal performance and is easy to mount.
6. Fast Switching: Designed for fast switching applications, it is ideal for use in power supplies, inverters, and motor drivers.
Due to its robust specifications, the FQPF12N60C is widely used in industrial, automotive, and renewable energy applications.
Package
Pinout
1. Gate (G) - The control terminal that regulates the flow of current between the drain and source.
2. Drain (D) - The terminal through which the current flows out of the MOSFET when it is turned on.
3. Source (S) - The terminal through which the current enters the MOSFET.
This MOSFET is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) rating of 12A. It is commonly used in power conversion and switching applications.
Manufacturer
Application
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