FQP9P25

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FQP9P25

MOSFET P-CH 250V 9.4A TO220-3

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Especificaciones

Package Tube
Series QFET®
ProductStatus Last Time Buy
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 250 V
Current-ContinuousDrain(Id)@25°C 9.4A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 620mOhm @ 4.7A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 38 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 1180 pF @ 25 V
PowerDissipation(Max) 120W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220-3

Descripción general

Description

FQP9P25 is a specific model of power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) developed by Fairchild Semiconductor, now part of ON Semiconductor. This N-channel MOSFET is designed for applications requiring efficient switching and amplification, making it suitable for power management, motor control, and various electronic circuits.
Key features include a low on-resistance (RDS(on)), which reduces power loss and enhances efficiency, a high breakdown voltage, and fast switching capabilities. Its thermal performance allows for effective heat dissipation, making it reliable in demanding environments.
Applications for FQP9P25 encompass consumer electronics, industrial automation, and automotive systems. When selecting this MOSFET for a project, it's essential to consider parameters such as maximum drain-source voltage (VDS), continuous drain current (ID), and the thermal characteristics to ensure optimal performance in the intended application. Always consult the datasheet for detailed specifications and recommended operating conditions.

Features

The FQP9P25 is a P-channel MOSFET designed for various switching and amplification applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of -25V, making it suitable for low to medium voltage applications.
2. Current Rating: The maximum continuous drain current (I_D) is -9.2A, allowing it to handle significant loads.
3. R_DS(on): It has a low on-resistance of around 0.15 ohms at V_GS of -10V, which reduces power loss and heat generation during operation.
4. Gate Threshold Voltage (V_GS(th)): Typically ranges from -1V to -3V, enabling it to be driven efficiently in various circuit configurations.
5. Package Type: Available in TO-220, TO-247, and other packages, offering flexibility in heat dissipation and mounting options.
6. Fast Switching: Suitable for high-speed applications, contributing to efficient circuit performance.
Overall, the FQP9P25 is ideal for power management, audio amplifiers, and motor control circuits.

Package

The FQP9P25 is typically packaged in a TO-220 format, which is a type of plastic package used for power transistors. This package provides good thermal performance and is suitable for high-power applications.

Pinout

The FQP9P25 is a P-channel MOSFET with a total of 5 pins. The pin configuration is as follows:
1. Gate (G): Controls the MOSFET's on/off state by applying a voltage relative to the source.
2. Source (S): The terminal through which the current enters the device when it is on.
3. Drain (D): The terminal through which the current exits the device when it is conducting.
4. Body (B): The substrate or body terminal, often internally connected to the source in MOSFETs.
The FQP9P25 is commonly used in power management applications, including switching and amplification. Its P-channel configuration makes it suitable for high-side switching applications. Its key specifications include a maximum V_DS of -25V, I_D of -9.2A, and a low on-resistance (R_DS(on)), making it efficient for handling power. Always refer to the manufacturer's datasheet for detailed electrical characteristics and applications.

Manufacturer

The FQP9P25 is manufactured by ON Semiconductor, a global supplier of semiconductor-based solutions. ON Semiconductor primarily focuses on delivering a wide range of electronic components, including power management, analog, and discrete devices. The company serves various markets, including automotive, industrial, communications, and consumer electronics. Established in 1999, ON Semiconductor has grown through mergers and acquisitions, positioning itself as a key player in the semiconductor industry, providing innovative technologies that enhance energy efficiency and performance in electronic systems.

Application

FQP9P25 is an N-channel MOSFET commonly used in various applications, including power management, switching power supplies, DC-DC converters, motor control, and audio amplifiers. Its low on-resistance and high-speed switching capabilities make it suitable for high-efficiency designs in consumer electronics, electric vehicles, and renewable energy systems.

Equivalent

The FQP9P25 is a P-channel MOSFET. Equivalent products include the IRF9540, PMBFJ309, and SI7333. Ensure to check specifications such as voltage rating, current capacity, and RDS(on) to confirm compatibility for your specific application.

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