FQP85N06

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FQP85N06

POWER FIELD-EFFECT TRANSISTOR, 8

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Especificaciones

Package Bulk
Series QFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 60 V
Current-ContinuousDrain(Id)@25°C 85A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 10mOhm @ 42.5A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 112 nC @ 10 V
Vgs(Max) ±25V
InputCapacitance(Ciss)(Max)@Vds 4120 pF @ 25 V
PowerDissipation(Max) 160W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220-3

Descripción general

Description

The FQP85N06 is an N-channel MOSFET designed for high-efficiency switching applications. It features a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of 85A, making it suitable for power management and control in various circuits, including power supplies, motor drivers, and automotive applications.
With a low on-resistance (R_DS(on)) of around 0.035 ohms, it provides efficient conduction and minimizes power loss. The FQP85N06 also has a high threshold voltage (V_GS(th)), typically around 2-4V, ensuring it operates effectively in low-voltage applications.
Its TO-220 package allows for easy heat dissipation, enhancing reliability in high-power scenarios. This MOSFET is often used in designs requiring fast switching and high reliability due to its robust construction. Overall, the FQP85N06 is a versatile component for engineers in power electronics.

Features

The FQP85N06 is a N-channel MOSFET designed for high-speed switching applications. Here are its key features:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V, which makes it suitable for various power applications.

2. Current Rating: The device can handle continuous drain current (I_D) up to 85A, making it effective for high-current applications.
3. On-Resistance: It features a low on-resistance (R_DS(on)) of around 0.022 ohms at V_GS = 10V, reducing power loss during operation.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2-4V, allowing for efficient driving with low gate voltages.
5. Package Type: Typically available in TO-220 or DPAK packages, facilitating easy heat dissipation.
6. Fast Switching: The FQP85N06 is optimized for fast switching times, making it ideal for applications like power supplies, motor drives, and DC-DC converters.
These features make the FQP85N06 a popular choice in automotive, industrial, and consumer electronics applications.

Package

The FQP85N06 is typically packaged in a TO-220 format. This package type facilitates efficient heat dissipation and is commonly used for power MOSFETs, making it suitable for various high-power applications.

Pinout

The FQP85N06 is an N-channel MOSFET with a pin count of 3. The pins are typically designated as follows:
1. Gate (G): This pin controls the MOSFET's switching functionality. Applying a voltage to the gate allows current to flow between the drain and source.

2. Drain (D): The drain pin is where the current enters the MOSFET. It connects to the load or the higher potential in the circuit.
3. Source (S): The source pin is where the current exits the MOSFET. It is usually connected to ground or the lower potential in the circuit.
The FQP85N06 is designed for high-speed switching applications and can handle high currents and voltages, making it suitable for power management applications, including motor control and power supplies.

Manufacturer

The FQP85N06 is manufactured by Fairchild Semiconductor, which is now part of ON Semiconductor following its acquisition in 2016. Fairchild was renowned for its semiconductor technologies and products, focusing on power management, analog, and logic devices. The company specialized in a wide range of electronic components, including transistors, diodes, and integrated circuits, serving various industries such as automotive, consumer electronics, and industrial applications. ON Semiconductor continues this legacy, providing advanced semiconductor solutions that support energy efficiency and innovation in electronic devices.

Application

The FQP85N06 is a N-channel MOSFET commonly used in applications such as power supplies, motor control, DC-DC converters, and switching regulators. Its high current and voltage ratings make it suitable for automotive, industrial, and consumer electronics. Additionally, it's utilized in LED drivers and various electronic circuit designs requiring efficient power management and switching capabilities.

Equivalent

Equivalent products for the FQP85N06 MOSFET include the IRF840, STP85NF06, and MTP85N06. These alternatives have similar specifications, such as voltage and current ratings, making them suitable replacements in various applications. Always verify specific parameters like RDS(on) and gate threshold voltage before substituting.

Envío

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DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

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