FQP55N10

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FQP55N10

MOSFET N-CH 100V 55A TO220-3

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Especificaciones

Package Tube
Series QFET®
ProductStatus Last Time Buy
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 55A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 26mOhm @ 27.5A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 98 nC @ 10 V
Vgs(Max) ±25V
InputCapacitance(Ciss)(Max)@Vds 2730 pF @ 25 V
PowerDissipation(Max) 155W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220-3

Descripción general

Description

The FQP55N10 is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-speed switching applications. It has a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) rating of 55A, making it suitable for power management, motor control, and other high-power applications.
Key features include a low on-resistance (R_DS(on)) of around 0.025 ohms, which helps in reducing power losses during operation. The MOSFET is typically used in circuits requiring efficient switching, such as in DC-DC converters, audio amplifiers, and power supplies.
The FQP55N10 operates efficiently at lower gate voltages (typically around 10V for full saturation), which is advantageous in many electronic designs. It is housed in a TO-220 package, allowing for effective heat dissipation, thus supporting high power handling capabilities. Overall, the FQP55N10 is a reliable choice for engineers looking to implement robust and efficient power electronic designs.

Features

The FQP55N10 is an N-channel MOSFET designed for high-speed switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, allowing it to handle a wide range of applications.

2. Current Rating: The device can conduct a continuous drain current (I_D) of up to 55A, making it suitable for power-intensive tasks.
3. R_DS(on): It offers a low on-resistance of approximately 0.035 ohms, which minimizes power loss during operation and improves efficiency.
4. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage ranges from 2V to 4V, enabling it to be driven by lower gate voltages.
5. Package: Typically available in a TO-220 package, which aids in heat dissipation and ease of mounting.
6. Applications: Commonly used in power supplies, motor drives, and other power conversion applications due to its robustness and efficiency.
These features make the FQP55N10 a popular choice for both hobbyist and professional electronic designs.

Package

The FQP55N10 is typically available in a TO-220 package type. This package features a metal tab for heat dissipation and is commonly used in power applications for its thermal performance and ease of mounting.

Pinout

The FQP55N10 is an N-channel MOSFET with a total of 3 pins. The pin configuration and their functions are as follows:
1. Gate (G) - This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.

2. Drain (D) - The drain pin is where the main current flows out when the MOSFET is turned on. It is connected to the load.
3. Source (S) - The source pin is the terminal through which current enters the MOSFET. It is typically connected to ground in low-side switching applications.
The FQP55N10 is designed for applications requiring high-speed switching and can handle high currents and voltages, making it suitable for power management and amplification tasks.

Manufacturer

The FQP55N10 is manufactured by ON Semiconductor, a company known for producing a wide range of semiconductor components and solutions. ON Semiconductor specializes in power management, analog, and mixed-signal devices, as well as discrete components like MOSFETs, which includes the FQP55N10. The company serves various industries, including automotive, industrial, and consumer electronics, focusing on energy-efficient solutions. Founded in 1999, ON Semiconductor has grown through acquisitions and innovation, positioning itself as a key player in the semiconductor market globally.

Application

The FQP55N10 is an N-channel MOSFET primarily used in power applications, including motor drivers, power supplies, and DC-DC converters. It is suitable for switching and amplification in low-voltage circuits, automotive applications, and audio amplifiers. Its low on-resistance and high-speed switching capabilities make it ideal for efficient power management in various electronic devices.

Equivalent

The FQP55N10 is an N-channel MOSFET with a 55V rating and 50A continuous current. Equivalent products include:
1. IRF540N
2. STP55NF06
3. RFP30N06L
4. FQP30N06L
Always check specifications for exact voltage, current ratings, and RDS(on) for compatibility in your application.

Envío

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DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

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