FQP12N60C

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FQP12N60C

POWER FIELD-EFFECT TRANSISTOR, 1

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Especificaciones

Series QFET®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 650mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 63 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2290 pF @ 25 V
Power Dissipation (Max) 225W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3

Descripción general

Description

The FQP12N60C is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-voltage applications. It features a voltage rating of 600V and a continuous drain current of up to 12A, making it suitable for power switching and amplification tasks in various electronic circuits.
Key specifications include a low on-resistance (typically around 0.18 ohms), which helps minimize power loss during operation, and a fast switching speed, enhancing efficiency in applications like power supplies, motor drivers, and inverter circuits.
The FQP12N60C is housed in a TO-220 package, allowing for effective heat dissipation, which is crucial in high-power applications. It has a gate threshold voltage of 2-4V, meaning it can be easily driven by low-voltage control circuits.
Overall, the FQP12N60C is a reliable choice for engineers looking to implement robust and efficient control in high-voltage environments.

Features

The FQP12N60C is a N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It can handle a maximum drain-to-source voltage (V_DS) of 600V, making it suitable for high-voltage applications.
2. Current Rating: It has a continuous drain current (I_D) rating of 12A at a case temperature of 25°C.
3. R_DS(on): The on-resistance is low, typically around 0.18 ohms at a gate-source voltage (V_GS) of 10V, which helps reduce power losses during operation.
4. Gate Threshold Voltage: The gate threshold voltage ranges from 2V to 4V, enabling it to be driven by low-voltage logic.
5. Package Type: It is available in a TO-220 package, allowing for effective heat dissipation and easy mounting in various circuits.
6. Fast Switching: The device supports fast switching speeds, making it ideal for switch-mode power supplies and other high-frequency applications.
These features make the FQP12N60C suitable for a variety of electronic applications, including power management systems.

Package

The FQP12N60C is typically packaged in a TO-220 or TO-247 package type. These packages are designed for efficient heat dissipation and easy mounting on heatsinks, making them suitable for high-power applications.

Pinout

The FQP12N60C is an N-channel MOSFET designed primarily for power switching applications. It features a TO-220 package with a total of 3 pins. The pin configuration is as follows:
1. Gate (G) - This pin controls the MOSFET's switching operation. A voltage applied to this pin allows current to flow between the drain and source.
2. Drain (D) - This pin is the output where the load is connected. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S) - This pin is connected to the ground or the negative side of the power supply, completing the circuit for the current flow.
The FQP12N60C is rated for a maximum drain-source voltage of 600V and a continuous drain current of 12A, making it suitable for high-voltage applications.

Manufacturer

The FQP12N60C is manufactured by Fairchild Semiconductor, which is now part of ON Semiconductor. Fairchild Semiconductor was a prominent company in the semiconductor industry, known for designing and producing a wide range of electronic components, including transistors, diodes, and power management solutions. They specialized in providing innovative semiconductor technologies for various applications, including automotive, industrial, and consumer electronics.
The FQP12N60C is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-voltage applications, capable of handling up to 60 volts and providing a continuous drain current of up to 12 amps. It is commonly used in power switching applications due to its efficiency and reliability.

Application

The FQP12N60C is a N-channel MOSFET used in various applications including power supplies, motor control, and switching circuits. Its high voltage rating (600V) and low on-resistance make it suitable for high-efficiency designs in DC-DC converters, inverters, and electronic ballast systems. Additionally, it is utilized in industrial automation, automotive applications, and LED lighting circuits due to its ability to handle significant power levels.

Equivalent

The FQP12N60C is a N-channel MOSFET offering 600V, 12A, and low RDS(on). Equivalent products include:
1. IRF840
2. STP12NK60Z
3. MTP12N60E
4. FQP13N60C
Always check specific datasheets for voltage, current, and thermal characteristics to ensure compatibility for your application.

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