FQH8N100C

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FQH8N100C

MOSFET N-CH 1000V 8A TO247-3

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Especificaciones

Series QFET®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.45Ohm @ 4A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 3220 pF @ 25 V
Power Dissipation (Max) 225W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package / Case TO-247-3
Base Product Number FQH8N100

Descripción general

Description

The FQH8N100C is a high-performance N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for power applications. It features a maximum drain-source voltage (V_DS) of 100 volts and a continuous drain current (I_D) of up to 8 amperes, making it suitable for various switching and amplification tasks in power management systems.
Key specifications include a low on-resistance (R_DS(on)), which minimizes power losses during operation and enhances efficiency. The device operates well at high frequencies, making it ideal for applications in converters, inverters, and power supplies.
Typically, it comes in a TO-220 package, providing good thermal performance, and is widely utilized in automotive, industrial, and consumer electronics sectors. The FQH8N100C is notable for its reliability and robustness, ensuring long-term performance in demanding environments. Overall, it is a critical component for engineers looking to optimize electrical systems.

Features

The FQH8N100C is an N-channel MOSFET designed for high-voltage applications. Key features include:
1. Voltage Rating: Supports a maximum drain-source voltage (Vds) of 100V, making it suitable for various high-voltage circuits.
2. Current Rating: Capable of handling continuous drain current (Id) up to 8A, enabling efficient power handling.
3. On-Resistance: Low Rds(on) value minimizes power loss during operation, enhancing efficiency.
4. Fast Switching: Designed for rapid switching applications, which improves performance in power supply circuits and motor control.
5. Thermal Management: Features a high thermal resistance, allowing for effective heat dissipation in demanding applications.
6. Package Type: Typically offered in TO-220 or similar packages for easy mounting and heat sinking.
Overall, the FQH8N100C is suitable for applications like power supplies, DC-DC converters, and industrial automation systems.

Package

The FQH8N100C is typically packaged in a TO-220 format, which is a type of plastic package used for power transistors. This package provides efficient heat dissipation and is suitable for high-power applications.

Pinout

The FQH8N100C is an N-channel MOSFET with a total of 8 pins. Its main functions include acting as a switch or amplifier in various electronic circuits. The key specifications highlight its ability to handle high voltage (up to 100V) and significant current (up to 8A).
The pin configuration typically includes:
1. Gate (G) - Controls the MOSFET's on/off state.
2. Drain (D) - The terminal through which the current flows out when the MOSFET is on.
3. Source (S) - The terminal from which the current enters when the MOSFET is on.
4. Body diode - Provides an inherent diode path for the current during reverse voltage conditions.
For specific applications, it is commonly used in power management, switching power supplies, and motor control due to its efficiency and fast switching capabilities. Always refer to the manufacturer's datasheet for detailed specifications and pin assignments.

Manufacturer

The FQH8N100C is manufactured by Fairchild Semiconductor, which is now part of ON Semiconductor. Fairchild Semiconductor is known for its production of semiconductor solutions, including power transistors, voltage regulators, and integrated circuits. The company was established in 1957 and played a significant role in the development of the semiconductor industry.
As a semiconductor manufacturer, Fairchild focuses on providing innovative solutions that serve various applications, including automotive, industrial, consumer electronics, and communications. They are recognized for their contributions to power management and energy efficiency technologies. Following its acquisition by ON Semiconductor in 2016, Fairchild's products and technologies continue to be integrated into ON Semiconductor's broader portfolio, enhancing the capabilities of the combined entity in the semiconductor market.

Application

FQH8N100C is an N-channel MOSFET primarily used in power management applications. Its application areas include DC-DC converters, motor drivers, power supplies, and switching applications in electronic devices. It can also be utilized in high-frequency circuits, audio amplifiers, and inverters for renewable energy systems. Its high voltage and current ratings make it suitable for various industrial and consumer electronic applications.

Equivalent

The FQH8N100C is a N-channel MOSFET commonly used in power applications. Equivalent products include the IRF840, STP8NK100Z, and MTP8N100E. Always verify specifications such as voltage, current ratings, and package type before substitution.

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DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

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