FQD7N10LTM

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FQD7N10LTM

MOSFET N-CH 100V 5.8A DPAK

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Especificaciones

Package Tape & Reel (TR),Cut Tape (CT)
Series QFET®
ProductStatus Last Time Buy
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 5.8A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 5V, 10V
RdsOn(Max)@IdVgs 350mOhm @ 2.9A, 10V
Vgs(th)(Max)@Id 2V @ 250µA
GateCharge(Qg)(Max)@Vgs 6 nC @ 5 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 290 pF @ 25 V
PowerDissipation(Max) 2.5W (Ta), 25W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage TO-252AA

Descripción general

Description

The FQD7N10LTM is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power applications. It features a low on-resistance, which minimizes conduction losses and improves thermal performance, making it suitable for applications like power management, DC-DC converters, and motor control.
Key specifications typically include a maximum drain-source voltage (Vds) of 100V, a continuous drain current (Id) of 7A, and a gate threshold voltage (Vgs) that allows for efficient switching. The device is housed in a compact package, optimizing space in electronic designs. Its fast switching capabilities contribute to its effectiveness in high-frequency applications, enhancing overall system efficiency.
The FQD7N10LTM's combination of performance, reliability, and thermal characteristics makes it a popular choice among engineers for various electronic and power circuit designs. Always consult the specific datasheet for detailed electrical characteristics and safe operating conditions.

Features

The FQD7N10LTM is an N-channel MOSFET designed for high-efficiency power applications. Key features include:
1. Voltage Rating: Typically rated for a maximum drain-source voltage (V_DS) of 100V, suitable for various power management applications.
2. Current Rating: Capable of handling continuous drain currents up to 7A, making it suitable for moderate power applications.
3. Low R_DS(on): Offers a low on-resistance, reducing conduction losses and improving efficiency in power conversion circuits.
4. Fast Switching Speed: Ideal for applications requiring rapid switching, such as in power supplies and converters.
5. Thermal Performance: Designed with a TO-220 package for effective heat dissipation, allowing for reliable operation under higher temperatures.
6. Gate Threshold Voltage (V_GS(th)): Typically around 2-4V, enabling it to be driven by standard logic levels.
These features make the FQD7N10LTM suitable for applications like DC-DC converters, motor drivers, and circuit protection.

Package

The FQD7N10LTM is typically packaged in a TO-220 format. This package type is designed for high-power applications, providing efficient thermal management and ease of heat sinking.

Pinout

The FQD7N10LTM is an N-channel MOSFET with a pin count of 3. The functions of its pins are as follows:
1. Gate (G): This pin controls the switching of the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is where the current enters the MOSFET when it is in the "on" state.
3. Source (S): This pin is where the current exits the MOSFET when it is turned on. It is typically connected to ground in low-side switching applications.
The FQD7N10LTM is commonly used in power applications due to its low on-resistance and high current handling capabilities.

Manufacturer

The FQD7N10LTM is manufactured by Fairchild Semiconductor, which is known for producing a wide range of semiconductor products, including power MOSFETs, diodes, and analog components. Fairchild Semiconductor specializes in high-performance and energy-efficient solutions for various industries, including automotive, computing, and consumer electronics. The company focuses on innovation in power management and signal processing technologies. Fairchild Semiconductor was acquired by ON Semiconductor in 2016, further expanding ON Semiconductor's portfolio and capabilities in the semiconductor market.

Application

The FQD7N10LTM is an N-channel MOSFET commonly used in power management applications, including DC-DC converters, motor drives, and switching power supplies. Its fast switching speeds and low on-resistance make it suitable for high-efficiency applications in consumer electronics, industrial automation, and renewable energy systems. Additionally, it can be used in audio amplifiers and other electronic circuits requiring efficient power delivery.

Equivalent

The FQD7N10LTM is a N-channel MOSFET. Equivalent products include the IRF740, STP7NK10Z, and MTP10N10E. Always verify specifications such as voltage, current ratings, and package type before substitution to ensure compatibility in your application.

Envío

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DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

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