FQD2N80TM

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FQD2N80TM

MOSFET N-CH 800V 1.8A DPAK

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  • Mfr. Parte #FQD2N80TM
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Especificaciones

Supplier onsemi
Package Tape & Reel (TR),Cut Tape (CT)
Series QFET®
ProductStatus Obsolete
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 800 V
Current-ContinuousDrain(Id)@25°C 1.8A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 6.3Ohm @ 900mA, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 15 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 550 pF @ 25 V
PowerDissipation(Max) 2.5W (Ta), 50W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage TO-252AA

Descripción general

Description

FQD2N80TM is a high-voltage N-channel MOSFET (enhancement mode) originally from Fairchild Semiconductor (now ON Semiconductor). It is built for switching power electronics with a drain–source voltage rating of about 800 V. It’s intended for high-voltage applications such as switch-mode power supplies, PFC stages, DC–DC converters, inverters, and motor drives.
Key points:
- Type: N-channel enhancement MOSFET
- Vds: ~800 V
- Drive: typically requires a conventional gate drive (around 10 V for full enhancement; threshold ~2–4 V)
- Package: surface-mount power package (check the datasheet for exact type)
- Applications: high-voltage switching in SMPS, inverters, motor control
- Characteristics: designed for switching efficiency and transient ruggedness; exact Id, Rds(on), Qg, and thermal specs must be taken from the datasheet
Note: Always consult the official datasheet for precise electrical parameters and recommended operating conditions.

Features

Here are the typical features of the FQD2N80TM (N-channel power MOSFET):
- N-channel enhancement-mode power MOSFET
- Vds: 800 V (high-voltage blocking capability)
- Id: rated for several amperes (depends on package and heat sinking)
- Rds(on): low on-resistance at Vgs = 10 V (reduces conduction losses)
- Gate drive: normally requires ~10 V for full enhancement; Vgs max ±20 V
- Fast switching suitable for high-voltage switch-mode applications
- Rugged body diode with good avalanche/dV/dt tolerance
- Pb-free, RoHS-compliant
- Package: surface-mount power package (typical for D2PAK/TO-263 style)

Package

D2PAK (TO-263) surface-mount package.

Pinout

FQD2N80TM is a 3‑pin N‑channel enhancement MOSFET (plus a metal tab). Pinout (face view, pins down):
1 — Gate, 2 — Drain, 3 — Source. The metal tab is tied to Drain.
Function: high‑voltage N‑channel power MOSFET used as a switching/transistor device (800 V class) for power conversion, switching and protection applications.

Manufacturer

- Manufacturer: Fairchild Semiconductor (now part of ON Semiconductor).
- What kind of company: A global semiconductor company that designs and manufactures discrete and integrated electronic components (e.g., MOSFETs, diodes, ICs). Fairchild was acquired by ON Semiconductor in 2016, and its product lines are now under ON Semiconductor.

Application

FQD2N80TM is an 800V N-channel power MOSFET. Key applications include:
- Offline switch-mode power supplies (PFC, flyback/forward)
- DC-DC converters
- Solar/wind inverters and renewable-energy power electronics
- Motor drives and servo controllers
- Uninterruptible Power Supplies (UPS) and energy-storage systems
- High-voltage AC-DC adapters and lighting ballast circuits
Note: Used where high-voltage, high-speed switching is required.

Equivalent

FQD2N80TM is an 800 V N‑channel MOSFET; there’s no guaranteed drop‑in equivalent. Use another 800 V N‑channel MOSFET with matching RDS(on), ID, VGS ratings, switching behavior and package. Common alternatives to consider (verify datasheets/pinout): STMicro STP8NK80Z, Infineon 800 V MOSFET series, Vishay 800 V N‑MOSFETs. Always cross‑check electrical, thermal and package specifications before substitution.

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