FQD1N60CTM

Las imágenes son solo para referencia

FQD1N60CTM

MOSFET N-CH 600V 1A DPAK

100% original & Nuevo

24 horas listos para el envío

Garantía de 365 días

RFQ y Obtenga más descuentos

Especificaciones

Package Tape & Reel (TR),Cut Tape (CT),Bulk
Series QFET®
ProductStatus Last Time Buy
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 600 V
Current-ContinuousDrain(Id)@25°C 1A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 11.5Ohm @ 500mA, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 6.2 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 170 pF @ 25 V
PowerDissipation(Max) 2.5W (Ta), 28W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage TO-252AA

Descripción general

Description

The FQD1N60CTM is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-voltage applications. It operates with a maximum drain-source voltage of 600 volts and a continuous drain current of 1 ampere. This device is commonly used in power management, switch-mode power supplies, and motor control circuits due to its efficient switching capabilities and low on-resistance, which minimizes power loss.
The FQD1N60CTM features a TO-220 package, making it suitable for efficient heat dissipation. Its fast switching speeds and high-speed operation make it ideal for high-frequency applications. Additionally, it has built-in thermal protection and is designed to withstand high temperatures, enhancing its reliability in demanding environments.
Overall, the FQD1N60CTM is valued for its performance in energy-efficient designs and applications that require robust control of high voltage and current.

Features

The FQD1N60CTM is a N-channel MOSFET designed for high-voltage applications. Key features include:
- Voltage Rating: Maximum drain-source voltage (VDS) of 600V, making it suitable for high-voltage circuits.
- Current Rating: Continuous drain current (ID) of 1A, allowing for moderate power handling.
- RDS(on): Low on-resistance of approximately 1.6 ohms, which minimizes power loss when the device is on.
- Gate Threshold Voltage (VGS(th)): Typically between 2V to 4V, facilitating easier drive from logic level voltages.
- Fast Switching Speed: Enables efficient operation in switching applications.
- Package Type: Available in TO-220 and DPAK packages for versatile mounting options in various applications.
- Applications: Suitable for use in power supply circuits, motor drives, and other high-voltage switching applications.
These features make the FQD1N60CTM a reliable choice for power management in electronic devices.

Package

The FQD1N60CTM is packaged in a TO-220 format. This package type is commonly used for power devices, providing effective heat dissipation and is suitable for applications requiring robust thermal management.

Pinout

The FQD1N60CTM is an N-channel MOSFET with a pin count of three. The pins are typically designated as follows:
1. Gate (G): Controls the MOSFET's switching operation. Applying a voltage to the gate creates an electric field that allows current to flow between the drain and source.
2. Drain (D): The terminal where the current flows out of the MOSFET. It is connected to the load in a circuit.
3. Source (S): The terminal from which current enters the MOSFET. It is typically connected to ground in common-source configurations.
This MOSFET is known for its high voltage (600V) and high current (1A) ratings, making it suitable for various power applications such as switching power supplies and motor control. Always reference the manufacturer's datasheet for specific pin configurations and electrical characteristics.

Manufacturer

The FQD1N60CTM is manufactured by Fairchild Semiconductor, which is now part of ON Semiconductor. Fairchild Semiconductor is a well-known company that specializes in designing and manufacturing a wide range of semiconductor products, including power management devices, analog ICs, and discrete components such as transistors and diodes. The company focuses on providing innovative solutions for various applications, including automotive, industrial, and consumer electronics. Fairchild is recognized for its expertise in power technologies, particularly in the areas of efficiency and performance. As a significant player in the semiconductor industry, it has a strong reputation for quality and reliability in its products.

Application

The FQD1N60CTM is a N-channel MOSFET primarily used in power electronics applications. Its application areas include switch-mode power supplies, motor drives, DC-DC converters, and high-frequency switching applications. It is also suitable for audio amplifiers, lighting control, and other electronic devices requiring efficient power management and switching capabilities.

Equivalent

The FQD1N60CTM is a 600V N-channel MOSFET. Equivalent products include IRF840, STP1N60, and MTP1N60. Always verify specifications like RDS(on), current rating, and package type to ensure compatibility in your specific application.

Envío

Métodos de envíoNosotros

ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.


Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

Pagos

Payment Methods

El plazo de pago es 100% prepagado.

Actualmente, solo aceptamos los siguientes métodos de pago:

1. de PayPal

2. Tarjeta de crédito/débito

3. Transferencia bancaria

Similar