FQD13N10L

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FQD13N10L

MOSFETs QF 100V 180MOHM L DPAK

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Descripción general

Description

The FQD13N10L is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power applications. It is part of the Fairchild Semiconductor (now part of ON Semiconductor) product line and is commonly used in power management circuits, switching power supplies, and motor control applications.
Key specifications include a maximum drain-source voltage (V_DS) of 100V, a continuous drain current (I_D) of 13A, and a low gate threshold voltage (V_GS(th)) typically around 2-4V, which allows for efficient switching. Its low on-resistance (R_DS(on)) minimizes power losses during operation.
The FQD13N10L is housed in a TO-220 package, making it suitable for heat dissipation in high-power applications. Its characteristics make it ideal for use in circuits requiring fast switching speeds and high reliability. Overall, it is a versatile component for electronic designers looking to optimize performance in various power circuit configurations.

Features

The FQD13N10L is an N-channel MOSFET designed for power switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 100V, making it suitable for medium voltage applications.
2. Current Rating: The device can handle continuous drain currents up to 13A at 25°C.
3. RDS(on): The on-resistance (RDS(on)) is typically around 0.11 ohms, providing efficient conduction and low power losses.
4. Gate Threshold Voltage (Vgs(th)): The threshold voltage ranges from 2V to 4V, allowing for easy drive from low-voltage logic levels.
5. Package: It is available in a TO-220 package, which facilitates good thermal performance and easy heat dissipation.
6. Fast Switching: The FQD13N10L is designed for high-speed switching, making it ideal for applications like DC-DC converters and motor control.
Overall, this MOSFET is suitable for various applications requiring efficient power management.

Package

The FQD13N10L is typically packaged in a TO-220 type package. This package design is commonly used for power MOSFETs, providing effective heat dissipation and easy mounting for various electronic applications.

Pinout

The FQD13N10L is an N-channel MOSFET with a total of 3 pins. The pin configuration and their functions are as follows:
1. Gate (G): This is the control terminal. A voltage applied here allows current to flow between the drain and source.
2. Drain (D): This is the terminal through which the main current flows out of the MOSFET when it is in the "on" state.
3. Source (S): This terminal is connected to the source of the current. It serves as the return path for the current flowing through the device.
The FQD13N10L is designed for high-speed switching applications and can handle up to 13A of continuous current with a maximum V_DS of 100V.

Manufacturer

The FQD13N10L is manufactured by Fairchild Semiconductor, which is a semiconductor company known for producing a wide range of electronic components, including power MOSFETs, diodes, and integrated circuits. Fairchild specializes in providing semiconductor solutions for various applications, such as automotive, industrial, and consumer electronics. The company is recognized for its innovation and quality in power management and analog technology. In 2016, Fairchild Semiconductor was acquired by ON Semiconductor, further expanding its capabilities and product offerings in the semiconductor industry.

Application

The FQD13N10L is an N-channel MOSFET primarily used in power management applications. Its application areas include DC-DC converters, motor drives, power inverters, and switching power supplies. It is suitable for high-efficiency power electronics due to its low on-resistance and fast switching capabilities, making it ideal for consumer electronics, renewable energy systems, and electric vehicles.

Equivalent

The FQD13N10L is an N-channel MOSFET. Equivalent products include the IRF510, IRF520, and STP16NF06. Always verify specifications like V_DS, I_D, and R_DS(on) before substitution, as there may be variations in performance and ratings.

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