FQD12P10TM

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FQD12P10TM

MOSFET P-CH 100V 9.4A TO252

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  • Mfr. Parte #FQD12P10TM
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Especificaciones

Supplier onsemi
Package Tape & Reel (TR)
Series QFET®
ProductStatus Obsolete
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 9.4A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 290mOhm @ 4.7A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 27 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 800 pF @ 25 V
PowerDissipation(Max) 2.5W (Ta), 50W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage TO-252AA

Descripción general

Description

FQD12P10TM is a P-channel enhancement-mode power MOSFET from the FQD family (Fairchild/ON Semiconductor). It’s intended for high-side switching in DC power circuits.
- Approximate specs: Vds around -100 V and Id about -12 A; low Rdson for efficient switching; gate-source voltage rating typical ±8 to ±20 V. “TM” usually denotes Tape & Reel packaging.
- How it’s used: as a high-side switch or protection device in power rails, motor drivers, and automotive/power-supply circuits.
- Gate drive: to turn on, apply a negative Vgs (gate below source); to turn off, bring Vgs close to 0 V (gate at source).
- Package: surface-mount, with a tape-and-reel variant.
- For exact values (Vds, Id, Rdson, Vgs(th), package type, thermal data), consult the official datasheet from ON Semiconductor/Fairchild.

Features

FQD12P10TM features (concise):
- P-channel enhancement-mode HEXFET power MOSFET
- VDS: -100 V; ID: ~12 A (continuous)
- Low on-resistance for high-efficiency switching
- Logic-level gate drive suitable for standard control voltages
- Fast switching with low gate charge
- Avalanche-rated rugged performance
- High-temperature capability (TJ up to ~150°C)
- RoHS-compliant, Tape & Reel packaging
Note: exact RDS(on) and gate thresholds are specified in the official datasheet.

Package

D2PAK (TO-263) surface-mount package.

Pinout

FQD12P10TM is a 3-pin power MOSFET package (plus a metal mounting/tab). The pin functions are Gate, Drain and Source (the metal tab is tied to the Drain). It is a P‑channel enhancement‑mode power MOSFET used for high‑side switching and general power‑switching applications.

Manufacturer

Manufacturer: ON Semiconductor (the FQD12P10TM was originally a Fairchild Semiconductor part — Fairchild is now part of ON Semiconductor).
What kind of company: ON Semiconductor is a global semiconductor manufacturer that designs and produces analog, power-management and discrete devices (including power MOSFETs), ICs and sensors for automotive, industrial, communications and consumer applications.

Application

FQD12P10TM is a P-channel power MOSFET. Common application areas include high-side switching and power-management for 12V rails: DC-DC converters and linear regulators; reverse-polarity and load protection; motor/actuator drive in portable and automotive systems; battery-powered devices; general 12V rail switching in consumer, industrial and automotive electronics.

Equivalent

I can’t reliably list direct equivalents without the FQD12P10TM’s key specs (Vds, Id, Rds(on), package and gate threshold). Please paste or confirm those specs or a datasheet link and I’ll give a concise list of drop‑in equivalent P‑channel MOSFETs.

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