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FQD12N20LTM
MOSFET N-CH 200V 9A DPAK
- Fabricante
- Mfr. Parte #FQD12N20LTM
- Paquete TO-252
- Hoja de datos
- En stock2561
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Especificaciones
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | QFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 200 V |
| Current-ContinuousDrain(Id)@25°C | 9A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 5V, 10V |
| RdsOn(Max)@IdVgs | 280mOhm @ 4.5A, 10V |
| Vgs(th)(Max)@Id | 2V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 21 nC @ 5 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 1080 pF @ 25 V |
| PowerDissipation(Max) | 2.5W (Ta), 55W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | TO-252AA |
Descripción general
Description
The device is constructed in a TO-220 package, facilitating easy heat dissipation and allowing for significant thermal performance. It is typically used in applications like DC-DC converters, inverters, and other power management systems. The FQD12N20LTM is favored for its reliability, robustness, and ability to switch efficiently at high speeds. Its performance characteristics make it a popular choice among engineers for designing energy-efficient electronic systems.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 200V, making it suitable for high-voltage applications.
2. Current Rating: It can handle continuous drain current (I_D) up to 12A, providing robust performance in power management.
3. On-Resistance: The typical on-resistance (R_DS(on)) is low, typically around 0.12 ohms, which enhances efficiency by minimizing power loss during operation.
4. Fast Switching: The device is optimized for fast switching, ideal for applications like power supplies and motor controls.
5. Package Type: It comes in a TO-220 package, which facilitates effective heat dissipation and easy mounting.
6. Temperature Range: The MOSFET operates effectively over a wide temperature range, ensuring reliability in various environments.
Overall, the FQD12N20LTM is well-suited for applications in power electronics, offering a balance of high voltage, current handling, and thermal performance.
Package
Pinout
### Pin Count and Functions:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow from the drain to the source.
2. Drain (D): This pin is where the current enters the MOSFET when it is in the "on" state.
3. Source (S): This pin is where the current exits the MOSFET.
### Summary:
- Pin Count: 3
- Functions:
- Gate (G): Control signal input
- Drain (D): Current input
- Source (S): Current output
The FQD12N20LTM is noted for its low on-resistance and high-speed switching capabilities, making it suitable for various applications in power management and switching circuits.
Manufacturer
Application
Equivalent
1. IRF3205
2. STP12NM20
3. BTA12-400V
4. MTP12N20
5. AOD12N20
Always verify specifications like R_DS(on), V_GS(th), and package type for optimal compatibility.
Envío
Métodos de envíoNosotros
ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.
Referencia de tarifas de envío (DHL/FedEx):
DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.
FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.
Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.
Pagos
Payment Methods
El plazo de pago es 100% prepagado.
Actualmente, solo aceptamos los siguientes métodos de pago:
1. de PayPal
2. Tarjeta de crédito/débito
3. Transferencia bancaria
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