FQB5N50CTM

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FQB5N50CTM

MOSFET N-CH 500V 5A D2PAK

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Especificaciones

Series QFET®
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.4Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 625 pF @ 25 V
Power Dissipation (Max) 73W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263 (D2PAK)
Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number FQB5N50

Descripción general

Description

The FQB5N50CTM is a high-voltage, N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power applications. It is part of the FQP series and typically features a maximum drain-source voltage (V_DS) of 500V and a continuous drain current (I_D) of 5A. This device is commonly used in switch-mode power supplies, motor drives, and other high-voltage circuit applications.
Key specifications include a low on-resistance (R_DS(on)), which minimizes power loss during operation, making it efficient for high-frequency switching applications. The FQB5N50CTM is housed in a TO-220 package, allowing for easy heat dissipation and mounting on heatsinks.
Its robust performance characteristics make it suitable for both consumer electronics and industrial applications, providing reliability and efficiency in various operating conditions. When designing circuits with this MOSFET, proper thermal management and gate drive considerations are essential to optimize performance and prevent damage.

Features

The FQB5N50CTM is a N-channel MOSFET designed for high-voltage applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 500V, making it suitable for high-voltage circuits.
2. Current Rating: It can handle a continuous drain current (I_D) of up to 5A at a specified temperature, which supports various load requirements.
3. Low On-Resistance: The device offers a low R_DS(on) value (typically around 0.75 ohms), minimizing power loss during operation.
4. Fast Switching Speed: It is designed for efficient switching, making it ideal for applications in power supplies and converters.
5. Thermal Performance: It has a maximum operating junction temperature (T_J) of 150°C, allowing it to function effectively in demanding environments.
6. Package Type: Usually available in TO-220 or similar packages, facilitating easy heat dissipation and installation.
These features make the FQB5N50CTM suitable for various applications such as automotive, power management, and industrial controls.

Package

The FQB5N50CTM is typically packaged in a TO-220 format, which is a three-lead package commonly used for power transistors. This package type offers good thermal performance and is suitable for applications requiring high power handling.

Pinout

The FQB5N50CTM is an N-channel MOSFET, commonly used in power switching applications. It typically comes in a TO-220 package, which has a pin count of 3.
The pin functions are as follows:
1. Gate (G): This pin receives the input signal that controls the MOSFET's operation. Applying a voltage to this pin turns the device on or off.
2. Drain (D): This is the pin where the load is connected. The current flows from the drain to the source when the MOSFET is in the 'on' state.
3. Source (S): This pin is connected to the ground or the negative terminal of the supply voltage; it is where the current exits the MOSFET.
In summary, the FQB5N50CTM has a total of 3 pins with the gate, drain, and source playing critical roles in its function as a power switch.

Manufacturer

The FQB5N50CTM is manufactured by Fairchild Semiconductor, which is now part of ON Semiconductor. Fairchild Semiconductor, founded in 1957, is known for its development of semiconductor technologies, including power management, signal processing, and various discrete components. The company specializes in providing high-performance and efficient semiconductor solutions for a wide range of applications, including automotive, industrial, consumer electronics, and communications. ON Semiconductor continues to leverage Fairchild's legacy and product portfolio, focusing on innovation in energy-efficient devices and technologies.

Application

The FQB5N50CTM is a N-channel MOSFET commonly used in power electronics applications. Its primary areas include switch mode power supplies, DC-DC converters, motor drivers, and power management systems. It is suitable for high-voltage applications due to its high breakdown voltage and efficient switching capabilities, making it ideal for industrial, automotive, and renewable energy systems.

Equivalent

The FQB5N50CTM is a 500V N-channel MOSFET. Equivalent products include the STP5NK50Z, IRFBC30, and MTP5N50. Be sure to check parameters like R_DS(on), gate threshold voltage, and package type to ensure compatibility for your application.

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