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FQB55N10TM
MOSFET N-CH 100V 55A D2PAK
- Fabricante
- Mfr. Parte #FQB55N10TM
- Paquete
- Hoja de datos FQB55N10TM DataSheet
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Especificaciones
| Supplier | onsemi |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | QFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 55A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 26mOhm @ 27.5A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 98 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 2730 pF @ 25 V |
| PowerDissipation(Max) | 3.75W (Ta), 155W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | D²PAK (TO-263) |
Descripción general
Description
Key points:
- Likely rating around 100 V drain‑to‑source with about 50–60 A continuous current.
- On‑state resistance is in the tens of milliohms range at a 10 V gate drive (higher if driven at 4.5 V).
- Gate drive is referenced to source; typical drive voltages are 10 V for lowest RDS(on), though check the datasheet for exact thresholds and drive requirements.
- Package options commonly include surface‑mount types (e.g., D2PAK/DPAK) with the drain tab for heat sinking.
Use cases include switching power supplies, motor controllers, and other high‑current, high‑speed switching applications. For precise electrical specs, safe operating area, thermal data, and pinout, consult the latest ON Semi/Fairchild datasheet for FQB55N10TM.
Features
- Vds: 100 V
- Id: 55 A (continuous)
- Rds(on): typically about 0.12–0.25 Ω (depends on package and temperature)
- Gate: threshold ~2–4 V; optimize conduction at around 10 V Vgs (lower Vgs may increase Rds(on))
- Fast switching with low gate charge; good dv/dt/di/dt performance
- Avalanche energy capability for rugged switching
- Packages: multiple options (e.g., TO-220AB through-hole and surface-mount D²PAK/DPAK variants)
- Applications: switch-mode power supplies, DC-DC converters, motor drivers, power switches
- Thermal/SA: designed for good thermal performance with heatsinking; max junction temp ~150°C
- Compliance: RoHS-compliant variants available
Note: exact Rds(on), packaging, and electrical limits vary by variant and lot; refer to the specific datasheet for final figures.
Package
Pinout
Pin functions (TO-220 style):
- Pin 1: Gate (G)
- Pin 2: Drain (D) — tab is electrically connected to Drain
- Pin 3: Source (S)
Device function: N‑channel enhancement‑mode power MOSFET for switching and power‑control applications (low‑side/high‑side switching, DC‑DC converters, motor drivers, etc.).
Manufacturer
Application
Equivalent
Envío
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