FQA11N90-F109

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FQA11N90-F109

MOSFET N-CH 900V 11.4A TO3PN

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  • Mfr. Parte #FQA11N90-F109
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Especificaciones

Series QFET®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V
Current - Continuous Drain (Id) @ 25°C 11.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 960mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 94 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 3500 pF @ 25 V
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3PN
Package / Case TO-3P-3, SC-65-3
Base Product Number FQA11

Descripción general

Description

The FQA11N90-F109 is a specific model of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). This component is typically used in power management applications due to its ability to handle high voltage and current. The 'FQA' in the name identifies the package type and series, while '11N90' indicates the key electrical characteristics: it can handle a maximum drain current of 11 amperes and a drain-source voltage of 900 volts. The 'F109' may refer to specific package or lot numbers, which can indicate certain manufacturing details.
This MOSFET is used in various applications, such as in switching power supplies, motor controllers, and other electronic devices requiring efficient voltage regulation and switching. It is prized for its efficiency and reliability in high-power situations, making it suitable for both consumer and industrial applications. The FQA11N90-F109, with its robust design, provides high-speed switching and low on-resistance, which contributes to minimizing power loss.

Features

The FQA11N90-F109 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power switching applications. Key features include:
1. N-Channel MOSFET: It is an N-channel device, which typically has a higher electron mobility compared to P-channel MOSFETs, allowing for better performance in some applications.
2. Voltage Rating: It has a high voltage rating, usually around 900V, making it suitable for high-voltage applications.
3. Current Rating: The device can handle significant current, with a typical continuous drain current of about 11A, depending on the specific model specifications.
4. Low On-Resistance: It features low on-state resistance, minimizing power loss and heat generation during operation.
5. Fast Switching Speed: The MOSFET is designed for fast switching, improving efficiency in high-frequency applications.
6. TO-3P Package: It often comes in a TO-3P package, which provides good thermal performance and ease of mounting.
7. Applications: Suitable for use in power supplies, inverters, and other applications requiring efficient voltage regulation and power conversion.
These features make the FQA11N90-F109 ideal for demanding power electronics applications where efficiency and reliability are crucial.

Package

The FQA11N90-F109 is a MOSFET transistor, and it typically comes in a TO-3P package type.

Pinout

The FQA11N90-F109 is a power MOSFET, and it typically comes in a TO-3P package. It has three pins:
1. Gate (G): This pin is used to control the MOSFET's conduction state. By applying a voltage to the gate, you can turn the MOSFET on or off.
2. Drain (D): This pin is the output of the MOSFET, where the main current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin serves as the return path for the drain current and is typically connected to the ground or the negative side of the supply voltage in most configurations.
The FQA11N90-F109 is a high-voltage, N-channel MOSFET designed for applications that require efficient power management and switching. It is capable of handling high currents and voltages, making it suitable for use in power supplies, inverters, and other high-power applications. Always refer to the device's datasheet for specific details and characteristics.

Manufacturer

The manufacturer of the FQA11N90-F109 is ON Semiconductor. ON Semiconductor is a global company that specializes in the design, manufacturing, and marketing of semiconductor components. It provides a comprehensive portfolio of energy-efficient power and signal management, logic, standard, and custom devices. These products serve a wide range of applications in various industries, including automotive, communications, computing, consumer electronics, industrial, medical, and military/aerospace. The company focuses on enabling customers to reduce global energy use while fostering a sustainable environment.

Application

The FQA11N90-F109 is a power MOSFET designed for high-voltage applications. It is commonly used in areas such as power supply units, motor drives, lighting systems, and renewable energy inverters. Its characteristics make it suitable for applications requiring efficient power switching and low conduction losses, such as in industrial equipment, automotive electronics, and consumer electronics.

Equivalent

The FQA11N90-F109 is an N-channel MOSFET with specific voltage and current ratings. Equivalent products would typically have similar specifications, such as voltage and current ratings, Rds(on), and package type. Some potential equivalents include the STP9NK90ZFP from STMicroelectronics or the IXFH9N90 from IXYS. Always compare the datasheets to ensure compatibility with your particular application requirements.

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