FM25V10-GTR

Las imágenes son solo para referencia

FM25V10-GTR

IC FRAM 1MBIT SPI 40MHZ 8SOIC

100% original & Nuevo

24 horas listos para el envío

Garantía de 365 días

RFQ y Obtenga más descuentos

Especificaciones

Package Tape & Reel (TR),Cut Tape (CT)
Series F-RAM™
ProductStatus Active
MemoryType Non-Volatile
MemoryFormat FRAM
Technology FRAM (Ferroelectric RAM)
MemorySize 1Mb (128K x 8)
MemoryInterface SPI
ClockFrequency 40 MHz
Voltage-Supply 2V ~ 3.6V
OperatingTemperature -40°C ~ 85°C (TA)
MountingType Surface Mount
Package/Case 8-SOIC (0.154, 3.90mm Width)

Descripción general

Description

The FM25V10-GTR is a non-volatile memory device designed for applications requiring reliable data storage. It is part of the Ferroelectric RAM (FeRAM) family, which combines the speed of SRAM with the non-volatility of Flash memory. The FM25V10-GTR offers a density of 1 megabit (128 kilobytes) and features fast read and write cycles, enabling quick data access and updates.
This device operates on a wide voltage range and supports a simple serial interface (SPI), making it compatible with various microcontrollers and digital systems. Its endurance is significantly higher than traditional Flash memory, with the capability of enduring millions of write cycles. Additionally, the FM25V10-GTR is ideal for applications in automotive, industrial, and consumer electronics where data integrity and longevity are critical.
In summary, the FM25V10-GTR is a versatile, high-performance memory solution suitable for a range of embedded systems that demand fast, reliable, and non-volatile data storage.

Features

The FM25V10-GTR is a non-volatile memory device featuring a 1 Megabit (128 K x 8) Ferroelectric RAM (FeRAM) architecture. Key features include:
1. Fast Read/Write Speed: Offers high-speed access with read and write times typically in the range of 40 ns.
2. Low Power Consumption: Designed for low power usage, making it suitable for battery-operated devices.
3. Unlimited Write/Erase Cycles: Unlike traditional Flash memory, it supports virtually unlimited write and erase cycles, enhancing durability.
4. Data Retention: Provides reliable data retention for over 10 years.
5. Wide Temperature Range: Operates effectively across a broad temperature range, typically -40°C to +85°C.
6. Simple Interface: Utilizes a standard SPI (Serial Peripheral Interface) for easy integration into various applications.
7. Small Package Size: Available in compact packages, suitable for space-constrained designs.
These features make the FM25V10-GTR ideal for applications in automotive, industrial, and consumer electronics requiring reliable, fast, and durable non-volatile storage.

Package

The FM25V10-GTR is available in a 8-pin SOIC (Small Outline Integrated Circuit) package type, which is a surface-mount format commonly used for integrated circuits.

Pinout

The FM25V10-GTR is a 10Mb (1.25MB) serial non-volatile memory device that utilizes Ferroelectric RAM (FRAM) technology. It has a pin count of 8. The pin functions are as follows:
1. Vcc: Power supply (typically 2.7V to 3.6V).
2. GND: Ground.
3. SCK: Serial Clock input.
4. SI: Serial Input (Data In).
5. SO: Serial Output (Data Out).
6. CS: Chip Select (active low).
7. WP: Write Protect (active low, used to disable writes).
8. HOLD: Hold (pauses communication when low).
This device provides fast read and write operations, low power consumption, and high endurance, making it suitable for various applications, including data logging and storage in embedded systems.

Manufacturer

The FM25V10-GTR is manufactured by Fusion Memory. Fusion Memory is a company that specializes in non-volatile memory solutions, particularly focusing on ferroelectric RAM (FeRAM) technology. They provide innovative memory products that offer advantages such as low power consumption, high endurance, and fast read/write speeds. As a developer of advanced memory technologies, Fusion Memory caters to various applications, including consumer electronics, automotive, and industrial sectors. Their products aim to meet the growing demand for reliable and efficient memory solutions in an increasingly connected world.

Application

The FM25V10-GTR is a non-volatile ferroelectric memory (FRAM) device used in various applications, including consumer electronics, automotive systems, industrial automation, and telecommunications. Its key features, such as fast write speeds, high endurance, and low power consumption, make it suitable for data logging, configuration storage, and real-time data acquisition in IoT devices, smart meters, and medical equipment.

Equivalent

The FM25V10-GTR is a 1 Mbit Ferroelectric RAM (FeRAM) chip. Equivalent products include the Cypress (now Infineon) FM25V10 and the Ramtron FM25V10. Other potential alternatives may include products from similar FeRAM manufacturers, such as STMicroelectronics or ON Semiconductor, but specific equivalents may vary. Always check datasheets for compatibility in your application.

Envío

Métodos de envíoNosotros

ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.


Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

Pagos

Payment Methods

El plazo de pago es 100% prepagado.

Actualmente, solo aceptamos los siguientes métodos de pago:

1. de PayPal

2. Tarjeta de crédito/débito

3. Transferencia bancaria