FM25L04B-GTR

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FM25L04B-GTR

IC FRAM 4KBIT SPI 20MHZ 8SOIC

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Especificaciones

Package Tape & Reel (TR),Cut Tape (CT)
Series F-RAM™
ProductStatus Active
MemoryType Non-Volatile
MemoryFormat FRAM
Technology FRAM (Ferroelectric RAM)
MemorySize 4Kb (512 x 8)
MemoryInterface SPI
ClockFrequency 20 MHz
Voltage-Supply 2.7V ~ 3.6V
OperatingTemperature -40°C ~ 85°C (TA)
MountingType Surface Mount
Package/Case 8-SOIC (0.154, 3.90mm Width)

Descripción general

Description

The FM25L04B-GTR is a 4Mb (megabits) serial non-volatile memory chip from the FM25L series, produced by Cypress Semiconductor (now part of Infineon Technologies). It utilizes a ferroelectric technology, which allows for high-speed data writing and retention without the need for power. This chip operates over a SPI (Serial Peripheral Interface) communication protocol, enabling easy integration with microcontrollers and other digital systems.
Key features include a wide operating voltage range (2.7V to 3.6V), fast read/write speeds, and endurance of over 1 million write cycles. Additionally, it supports a temperature range suitable for industrial applications, enhancing its reliability in various environments.
The FM25L04B-GTR is ideal for applications requiring frequent data updates, such as data logging, configuration storage, and firmware updates, due to its fast access time and low power consumption. Its non-volatile nature ensures that data is preserved even during power loss, making it an excellent choice for embedded systems and IoT devices.

Features

The FM25L04B-GTR is a 4-Mbit (512K x 8) non-volatile memory device that uses Ferroelectric RAM (FRAM) technology. Key features include:
1. Memory Type: Non-volatile FRAM, which allows infinite read/write cycles.
2. Speed: Fast access time, typically around 45 ns.
3. Interface: SPI (Serial Peripheral Interface) compatible, supporting various clock speeds.
4. Low Power Consumption: Operates at low voltage (typically 2.7V to 3.6V) with minimal energy usage during read/write operations.
5. Data Retention: Retains data for over 10 years at 85°C.
6. Endurance: Capable of over 10 trillion read/write cycles, far exceeding conventional EEPROM or Flash memory.
7. Temperature Range: Operates within a wide temperature range, making it suitable for diverse applications.
8. Package Options: Available in different packages such as SOIC and DFN for flexible design integration.
These features make the FM25L04B-GTR ideal for applications requiring reliable, high-speed, and low-power non-volatile memory solutions.

Package

The FM25L04B-GTR is offered in an 8-pin SOIC (Small Outline Integrated Circuit) package type. This surface-mount package is designed for efficient integration into electronic circuits, featuring a compact footprint suitable for space-constrained applications.

Pinout

The FM25L04B-GTR is a 4Mb Ferroelectric Random Access Memory (FRAM) device with a total of 8 pins. The pin configuration and their functions are as follows:
1. VDD - Power supply.
2. GND - Ground reference.
3. SCK - Serial clock input for SPI communication.
4. SI - Serial data input for SPI communication.
5. SO - Serial data output for SPI communication.
6. CS - Chip select input; activates the device for communication.
7. WP - Write protect; controls write access to the memory.
8. HOLD - Hold pin; pauses the serial communication.
The FM25L04B-GTR operates via an SPI interface, allowing for fast data access and is designed for non-volatile memory applications.

Manufacturer

The FM25L04B-GTR is manufactured by Fujitsu, a leading company in the semiconductor industry. Fujitsu is a global technology company based in Japan, known for its wide range of products and services, including computing, networking, and storage solutions. The FM25L04B-GTR is a non-volatile memory device, specifically a ferroelectric RAM (FRAM) chip, which is used in various applications requiring fast write speeds and high endurance. Fujitsu operates in several sectors, including information technology, telecommunications, and electronics, making it a significant player in the tech industry.

Application

The FM25L04B-GTR is a ferroelectric memory device used in various applications such as automotive electronics, industrial controls, consumer electronics, and smart meters. Its non-volatile nature allows for data retention without power, making it suitable for firmware storage, configuration settings, and data logging. Additionally, it is ideal for applications requiring high endurance and low power consumption, such as IoT devices and wireless sensors.

Equivalent

The FM25L04B-GTR is a 4Mb Ferroelectric RAM (FRAM) chip. Equivalent products include the Cypress CY15B104Q, STMicroelectronics M24C04, and Fujitsu MB85RC04. While these chips may have similar functionalities, ensure compatibility in terms of voltage, interface, and memory specifications for specific applications. Always consult datasheets for precise equivalence.

Envío

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DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

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