FGL60N100BNTDTU

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FGL60N100BNTDTU

IGBT 1000V 60A 180W TO264

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Especificaciones

Package Tube
ProductStatus Last Time Buy
IGBTType NPT and Trench
Voltage-CollectorEmitterBreakdown(Max) 1000 V
Current-Collector(Ic)(Max) 60 A
Current-CollectorPulsed(Icm) 120 A
Vce(on)(Max)@VgeIc 2.9V @ 15V, 60A
Power-Max 180 W
InputType Standard
GateCharge 275 nC
Td(on/off)@25°C 140ns/630ns
TestCondition 600V, 60A, 51Ohm, 15V
ReverseRecoveryTime(trr) 1.2 µs
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
Package/Case TO-264-3, TO-264AA

Descripción general

Description

The FGL60N100BNTDTU is a high-voltage, N-channel MOSFET designed for various power applications. It features a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) rating of 60A, making it suitable for tasks such as switching and amplification in power supplies and motor control circuits.
This MOSFET is characterized by a low on-resistance (R_DS(on)), enhancing its efficiency and thermal performance, which is critical for reducing heat generation in high-power applications. The device is housed in a robust TO-220 package, facilitating effective heat dissipation and easy integration into circuit boards.
Typical applications include DC-DC converters, inverters, and other power management systems where high efficiency and thermal stability are paramount. The FGL60N100BNTDTU is commonly used in industrial and automotive applications, contributing to improved energy efficiency and reliable performance in demanding environments.
For optimal performance, proper thermal management and circuit design considerations are essential when integrating this MOSFET into electronic designs.

Features

The FGL60N100BNTDTU is a high-voltage, N-channel MOSFET designed for power applications. Key features include:
1. Voltage Rating: It operates at a maximum drain-source voltage (V_DS) of 100V.
2. Current Rating: It supports continuous drain current (I_D) up to 60A.
3. R_DS(on): It has a low on-resistance, typically around 0.05 ohms, which enhances power efficiency and reduces heat generation.
4. High Switching Speed: Suitable for fast switching applications, improving overall performance in circuits.
5. Package Type: Encased in a TO-220 package, facilitating efficient heat dissipation.
6. Temperature Range: Operates effectively across a broad temperature range, ensuring reliability in various environments.
7. Applications: Commonly used in DC-DC converters, motor drivers, and other high-efficiency power management systems.
These features make the FGL60N100BNTDTU an ideal choice for demanding power applications requiring efficiency and reliability.

Package

The FGL60N100BNTDTU is packaged in a TO-247 format. This type of package is suitable for high-power applications, providing efficient thermal management and easy mounting on heatsinks.

Pinout

The FGL60N100BNTDTU is a 1000V, 60A N-channel MOSFET manufactured by Fairchild Semiconductor (now part of ON Semiconductor). It features a total of 3 pins:
1. Gate (G) - This pin is used to control the MOSFET. A voltage applied to the gate relative to the source turns the MOSFET on/off.
2. Drain (D) - This pin is the output where the load connects. Current flows from the drain to the source when the device is turned on.
3. Source (S) - This pin is connected to the ground or the negative side of the circuit. It serves as the return path for the current.
The FGL60N100BNTDTU is designed for applications in power switching, including inverters and motor drives, renowned for its high efficiency and fast switching capabilities.

Manufacturer

The FGL60N100BNTDTU is manufactured by ON Semiconductor, a global supplier of semiconductor-based solutions. ON Semiconductor specializes in a wide range of products, including power management, analog, and discrete components, as well as sensors and integrated circuits. The company serves diverse industries such as automotive, industrial, communications, and consumer electronics. ON Semiconductor focuses on providing energy-efficient solutions and is known for its commitment to innovation and sustainability in the semiconductor sector.

Application

The FGL60N100BNTDTU is a 1000V, 60A N-channel MOSFET primarily used in power electronics applications, including switch-mode power supplies (SMPS), electric vehicles (EVs), and renewable energy systems like solar inverters. Its high voltage and current ratings make it suitable for industrial motor drives and UPS systems, enabling efficient power conversion and management.

Equivalent

The FGL60N100BNTDTU is a 1000V, 60A IGBT. Equivalent products include the FGL60N100BNT, FGA60N100BNT, and other similar IGBTs from manufacturers like Infineon, ON Semiconductor, and Mitsubishi, with similar voltage and current ratings. Always verify specifications like gate threshold voltage, switching speed, and thermal characteristics for compatibility.

Envío

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Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

Pagos

Payment Methods

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