FGL60N100BNTD

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FGL60N100BNTD

IGBT 1000V 60A 180W TO264

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Especificaciones

Package Tube
ProductStatus Obsolete
IGBTType NPT and Trench
Voltage-CollectorEmitterBreakdown(Max) 1000 V
Current-Collector(Ic)(Max) 60 A
Current-CollectorPulsed(Icm) 120 A
Vce(on)(Max)@VgeIc 2.9V @ 15V, 60A
Power-Max 180 W
InputType Standard
GateCharge 275 nC
Td(on/off)@25°C 140ns/630ns
TestCondition 600V, 60A, 51Ohm, 15V
ReverseRecoveryTime(trr) 1.2 µs
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
Package/Case TO-264-3, TO-264AA

Descripción general

Description

The FGL60N100BNTD is a high-voltage N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power applications. It features a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of 60A, making it suitable for high-efficiency power management and switching applications. Its low on-resistance (R_DS(on)) ensures minimal energy loss during operation, enhancing overall efficiency.
This MOSFET is often utilized in various applications, including power supplies, motor drives, and DC-DC converters. Key features include fast switching speeds, robust thermal performance, and a low gate charge, allowing for quick response times in circuit designs. The FGL60N100BNTD is typically housed in a TO-220 package, providing ease of heat dissipation and mounting in electronic systems.
Overall, this component is ideal for engineers seeking reliable and efficient solutions for high-power applications in consumer electronics, industrial machinery, and renewable energy systems.

Features

The FGL60N100BNTD is a high-performance N-channel MOSFET designed for industrial applications. Key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage (Vds) of 100V, making it suitable for various power applications.
2. Current Rating: The device supports continuous drain current (Id) of up to 60A, allowing for robust performance under load.
3. Low On-resistance: With a low Rds(on), typically around 0.05 ohms at a gate-source voltage (Vgs) of 10V, it ensures efficient power delivery and reduced heat generation.
4. Fast Switching Speed: The FGL60N100BNTD features quick switching capabilities, enhancing efficiency in high-frequency applications.
5. Thermal Performance: It has a high thermal resistance, enabling it to operate effectively at elevated temperatures.
6. Package Type: Available in a TO-220 package, it offers easy mounting and good thermal dissipation.
These features make the FGL60N100BNTD suitable for applications in power supplies, motor control, and various switching applications.

Package

The FGL60N100BNTD is typically packaged in an IGBT TO-247 format, which is a robust, high-power package designed for efficient thermal management and ease of mounting in electronic circuits.

Pinout

The FGL60N100BNTD is a silicon carbide (SiC) MOSFET designed for high-power applications. It typically has a pin count of 4, with the following functions:
1. Gate (G): Controls the switching of the MOSFET. Applying a voltage here turns the device on or off.
2. Drain (D): This is the terminal where the load is connected and is responsible for carrying the majority of the current when the device is on.
3. Source (S): Connected to the ground or negative side of the circuit, the source is where the current exits the MOSFET.
Additionally, some versions may feature a thermal pad for heat dissipation, which is essential in high-performance applications. Always refer to the specific datasheet for detailed pin configuration and electrical characteristics.

Manufacturer

The FGL60N100BNTD is manufactured by Fujitsu Limited, a multinational company based in Japan. Fujitsu is primarily known for its information technology services and products, including computing, telecommunications, and electronic components. It operates in various sectors, including cloud computing, AI, and electronic devices. Fujitsu is recognized for its research and development in technology and offers innovative solutions across different industries. The FGL60N100BNTD is a specific model of power MOSFET, utilized in various electronic applications such as power management and conversion systems.

Application

The FGL60N100BNTD is a high-voltage N-channel MOSFET primarily used in power electronics applications. Its areas of application include switch-mode power supplies, DC-DC converters, motor drives, and industrial power systems. It is suitable for high-efficiency and high-performance designs due to its low on-resistance and fast switching capabilities, making it ideal for renewable energy systems and electric vehicles.

Equivalent

The FGL60N100BNTD is a 1000V, 60A IGBT. Equivalent products include the Infineon FGH60N100SMD, ON Semiconductor MGD60N100E, and Toshiba GT60N100. Always verify specifications and performance details for compatibility in your specific application.

Envío

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Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

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