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FGH75T65SHD
- Fabricante
- Mfr. Parte #FGH75T65SHD
- Paquete
- Hoja de datos
- En stock3107
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Especificaciones
| Brand | onsemi |
| Product Type | IGBT Transistors |
| Subcategory | IGBTs |
| Packaging | Tube |
| Maximum Gate Emitter Voltage | - 20 V, 20 V |
| Factory Pack Quantity:Factory Pack Quantity | 450 |
Descripción general
Description
The device is constructed with a robust package that facilitates effective thermal management, allowing for reliable operation under demanding conditions. Key specifications often include a maximum drain-source voltage (V_DS) rating suitable for various applications, along with a high current rating that can support significant load requirements.
For designers, the FGH75T65SHD is valued for its fast switching capabilities, which contribute to improved performance in applications that require rapid power cycling. Overall, this MOSFET is an excellent choice for engineers looking to enhance the efficiency and reliability of their power electronics designs.
Features
1. Processor: Equipped with a powerful multi-core processor for efficient multitasking and smooth operation.
2. Display: High-resolution display for vibrant visuals, potentially offering touchscreen functionality for enhanced user interaction.
3. Connectivity: Multiple connectivity options, such as Wi-Fi, Bluetooth, and USB ports, allowing seamless integration with other devices.
4. Storage: Ample internal storage capacity, often expandable via external drives or cloud services for increased flexibility.
5. Battery Life: Long-lasting battery performance for extended usage without frequent recharging.
6. Durability: Robust design, possibly with water and dust resistance, ensuring longevity in various environments.
7. User Interface: Intuitive user interface for ease of use, often customizable to fit individual preferences.
Always check the manufacturer's specifications for the most accurate and detailed information.
Package
Pinout
1. Gate (G) - Controls the MOSFET's on/off state.
2. Drain (D) - The terminal through which current flows out of the MOSFET.
3. Source (S) - The terminal through which current flows into the MOSFET.
4. Gate-Source (G-S) - For voltage rating purposes.
5. Drain-Source (D-S) - For voltage rating purposes.
6. Thermal Pad - Typically used for heat dissipation.
This device is characterized by its high voltage and current ratings, making it suitable for demanding applications. Always refer to the specific datasheet for detailed electrical characteristics and maximum ratings.
Manufacturer
Application
Equivalent
Envío
Métodos de envíoNosotros
ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.
Referencia de tarifas de envío (DHL/FedEx):
DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.
FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.
Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.
Pagos
Payment Methods
El plazo de pago es 100% prepagado.
Actualmente, solo aceptamos los siguientes métodos de pago:
1. de PayPal
2. Tarjeta de crédito/débito
3. Transferencia bancaria
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