FGH60N60SFDTU

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FGH60N60SFDTU

IGBT FIELD STOP 600V 120A TO247

  • Fabricante
  • Mfr. Parte #FGH60N60SFDTU
  • Paquete TO-247AB-3
  • Hoja de datos
  • En stock5234

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Especificaciones

Package Tube
ProductStatus Active
IGBTType Field Stop
Voltage-CollectorEmitterBreakdown(Max) 600 V
Current-Collector(Ic)(Max) 120 A
Current-CollectorPulsed(Icm) 180 A
Vce(on)(Max)@VgeIc 2.9V @ 15V, 60A
Power-Max 378 W
SwitchingEnergy 1.79mJ (on), 670µJ (off)
InputType Standard
GateCharge 198 nC
Td(on/off)@25°C 22ns/134ns
TestCondition 400V, 60A, 5Ohm, 15V
ReverseRecoveryTime(trr) 47 ns
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
Package/Case TO-247-3

Descripción general

Description

The FGH60N60SFDTU is a high-performance N-channel MOSFET designed for power electronics applications. It features a voltage rating of 600V and a continuous drain current of 60A, making it suitable for high-voltage, high-current applications like power supplies, motor drives, and inverters. The device is known for its low on-resistance (R_DS(on)), which improves efficiency and reduces heat generation during operation.
The FGH60N60SFDTU is constructed using advanced silicon technology that enhances its switching speed and thermal performance. It typically comes in a TO-220 package, which facilitates efficient heat dissipation. This MOSFET is often used in applications requiring fast switching and high reliability, such as renewable energy systems and industrial automation.
Overall, its robust specifications make it a preferred choice for engineers looking to design efficient power management systems.

Features

The FGH60N60SFDTU is a high-performance N-channel MOSFET designed for various applications in power electronics. Key features include:
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 600V, suitable for high-voltage applications.
2. Current Rating: Continuous drain current (I_D) of up to 60A, allowing for substantial power handling.
3. Low R_DS(on): On-state resistance of approximately 0.18 ohms, which minimizes conduction losses and enhances efficiency.
4. Fast Switching: Optimized for high-speed switching applications, making it ideal for use in inverters, converters, and power supplies.
5. Thermal Performance: High junction temperature rating and efficient thermal management capabilities.
6. TO-247 Package: Robust package design for effective heat dissipation.
Overall, the FGH60N60SFDTU is suitable for applications requiring reliable performance in harsh environments, such as industrial drives, automotive systems, and renewable energy systems.

Package

The FGH60N60SFDTU is packaged in a TO-247 style package. This package type is commonly used for power devices, providing good thermal performance and allowing for easy mounting on heatsinks.

Pinout

The FGH60N60SFDTU is an N-channel MOSFET typically used in power applications. It features a TO-247 package with a pin count of three.
The pin functions are as follows:
1. Gate (G): This pin controls the MOSFET's switching operation. Applying a positive voltage relative to the source turns the device on.
2. Drain (D): This pin is where the load is connected. The current flows from this pin when the MOSFET is in the on state.
3. Source (S): This pin is connected to the ground or the negative side of the power supply in most applications.
The FGH60N60SFDTU is designed for high-voltage and high-current applications, making it suitable for power supplies, motor drives, and various switching applications.

Manufacturer

The FGH60N60SFDTU is manufactured by Fairchild Semiconductor, which is now part of ON Semiconductor Corporation. Fairchild Semiconductor was known for designing and manufacturing a wide range of semiconductor products, including power MOSFETs, which the FGH60N60SFDTU is a part of. The company specializes in delivering efficient and innovative semiconductor solutions for various industries, including automotive, industrial, and consumer electronics. ON Semiconductor continues to provide a diverse portfolio of products, focusing on power management, analog, and mixed-signal devices, and is recognized for its commitment to sustainability and energy efficiency in semiconductor technology.

Application

FGH60N60SFDTU is a high-voltage N-channel MOSFET typically used in applications such as power supplies, motor drives, and industrial equipment. Its features make it suitable for switching applications, inverters, and converters in renewable energy systems, as well as in electric vehicles and HVAC systems. Its high efficiency and thermal performance allow for use in demanding environments.

Equivalent

The FGH60N60SFDTU is an N-channel MOSFET from Fairchild Semiconductor with a 600V rating and 60A current capacity. Equivalent products include the STP60NF60 from STMicroelectronics, IRF840 from Infineon, and the MTD60N60 from ON Semiconductor. Ensure to check specifications like RDS(on), gate threshold voltage, and package type for compatibility.

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DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

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